Stress-controllable stress silicon and preparation method thereof

Abstract

The invention discloses stress-controllable stress silicon and a preparation method thereof, and relates to the technical field of stress silicon. The preparation method comprises the following steps: etching a silicon waveguide region to form amorphous silicon growth windows, wherein the amorphous silicon growth window is formed by etching the upper surface of the silicon waveguide region, and the amorphous silicon growth windows are rectangular and are distributed in the silicon waveguide region in a rectangular array manner; depositing amorphous silicon in the amorphous silicon growth window, and covering the surface of the deposited amorphous silicon with a silicon dioxide layer; and irradiating the amorphous silicon growth window with light with a wavelength of 488 nm to convert at least one part of the amorphous silicon in the amorphous silicon growth window into monocrystalline silicon. According to the technical scheme, the carrier mobility of the stress silicon is improved, the working frequency of a device is improved, a first-order electro-optical effect is achieved, tensile stress is generated in the silicon to reduce the band gap of the silicon, and signal light of a C communication wave band can be absorbed.

Description

technical field [0001] The invention relates to the technical field of stressed silicon, in particular to stress-controllable stressed silicon and a preparation method thereof. Background technique [0002] Silicon is a semiconductor material that is the main material that constitutes today's electronic information systems. The substrate of today's electronic information integrated circuits is mainly silicon material, and silicon has a mature CMOS processing technology, and has the advantages of large size and low cost. In addition, based on the mature CMOS process, silicon-based integrated optoelectronic technology has also been developed in full swing and initially put into commercial use. [0003] However, for the requirements of rich and efficient information processing, silicon materials gradually show some deficiencies in the fields of integrated electronics and integrated optoelectronics. For example, due to the limitation of carrier mobility in silicon, the operati...

AI Technical Summary

Problems solved by technology

For example, due to the limitation of carrier mobility in silicon, the operating frequency of silicon electronic devices is restricted; silicon cannot absorb long-wavelength light due to its large band gap; silicon does not have the first-order electro-optic effect, and the modulation of silicon-based modulators not efficient etc.

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