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Pre-through hole etching-based preparation method of GaN-based HEMT device

A device and pre-pass technology, applied in the field of semiconductor design and manufacturing, can solve the problems of yield reduction, high manufacturing and equipment costs

Active Publication Date: 2021-09-14
上海新微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a GaN-based HEMT device based on pre-via etching, which is used to solve the problem of the GaN-based HEMT device in the prior art when the source metal is drawn out. The cost of preparation and equipment is high and it is easy to lead to the problem of lower yield

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  • Pre-through hole etching-based preparation method of GaN-based HEMT device
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  • Pre-through hole etching-based preparation method of GaN-based HEMT device

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Embodiment 1

[0053] Such as Figure 1 to Figure 10 As shown, this embodiment provides a method for preparing a GaN-based HEMT device based on pre-via etching. The device may be a radio frequency device, for example. The preparation method includes the steps:

[0054] Such as Figure 1 ~ Figure 2 As shown, step 1) is first performed to provide a substrate 101, the substrate 101 includes a first main surface and a second main surface opposite, and a deep groove is etched in the first main surface of the substrate 101 Groove 102, the deep trench 102 is set corresponding to the source of the GaN-based HEMT device.

[0055] As an example, the substrate 101 includes one of a silicon-based substrate, a silicon carbide substrate, a gallium nitride substrate, and a sapphire substrate. In this embodiment, the substrate 101 is selected as a semi-insulating silicon substrate, which is used as the substrate required for the growth of the epitaxial layer structure of the GaN-based HEMT device.

[0056...

Embodiment 2

[0079] Such as Figure 11 As shown, this embodiment provides a method for preparing a GaN-based HEMT device, the basic steps and basic structure of which are as in Embodiment 1, wherein the difference from Embodiment 1 is that the substrate is selected as a silicon carbide substrate 201.

Embodiment 3

[0081] Such as Figure 12 As shown, this embodiment provides a method for preparing a GaN-based HEMT device, the basic steps of which are as in Embodiment 1, wherein the difference from Embodiment 1 lies in: step 2) the filling of the deep trench 102 The sacrificial dielectric layer 103 includes holes 301 inside the sacrificial dielectric layer 103 . In this embodiment, the surface of the substrate 101 is required to be a flat surface without depressions after the subsequent planarization process. On the one hand, the present application can allow the sacrificial dielectric layer 103 to contain holes 301, so the deposition requirements of the sacrificial dielectric layer 103 can be reduced, and the process window of the sacrificial dielectric layer 103 can be greatly widened. On the other hand, the sacrificial dielectric layer 103 contains The hole 301 can improve the efficiency of the subsequent selective removal of the sacrificial dielectric layer 103 , thereby reducing the ...

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Abstract

The invention provides a pre-through hole etching-based preparation method of a GaN-based HEMT device. According to the preparation method, a deep groove is formed in a substrate, and is filled with a sacrificial dielectric layer; thinning is performed to expose the deep groove after the front structure of the GaN-based HEMT device is manufactured; after a sacrificial dielectric layer is removed, a through hole structure for leading out a source electrode metal can be formed just by etching an epitaxial layer structure; and therefore, back etching of the substrate in the later period is avoided, damage of etching to the front face structure of the device is avoided, the yield of the device is effectively improved, and production equipment and cost are saved. According to the preparation method, the technological process can be optimized, the back face technological process is reduced, the requirement of the preparation technology for equipment compatibility is lowered, and meanwhile device damage caused by the follow-up deep etching technology can be effectively avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, in particular to a preparation method of a GaN-based HEMT device based on pre-via etching. Background technique [0002] With the advent of the 5G era, the demand for high-frequency and high-power radio frequency devices in the communication field is becoming stronger and stronger. Due to its unique material properties, GaN materials are expected to be used in the future communication field. Due to the difficulty in manufacturing GaN substrates, GaN materials are generally formed by epitaxial growth on Si / SiC substrates. The top of the epitaxial structure can be changed by doping Al or In composition during epitaxial growth to form a high electron mobility. Two-dimensional electron gas structure, based on this structure to manufacture GaN-based HEMT devices. [0003] The source of a GaN-based HEMT RF device usually needs to be connected to the back of the device through a thro...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/7786H01L29/0603H01L29/0684H01L29/66462
Inventor 刘胜北
Owner 上海新微半导体有限公司
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