A kind of method that sol-gel method prepares vanadium pentoxide film

A technology of vanadium pentoxide and gel method, applied in vanadium oxide and other directions, can solve the problems of rough and porous thin film, low deposition rate, and many oxygen vacancies in thin film, and achieve dense and smooth surface, simple preparation process and low energy consumption. Effect

Active Publication Date: 2022-06-07
HARBIN INST OF TECH
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Problems solved by technology

[0004] The present invention will solve the problem of V prepared by existing vacuum evaporation method and sputtering method. 2 o 5 There are many oxygen vacancies in the film, poor process stability, low deposition rate, and low-valence vanadium oxides; the sol-gel method prepares V 2 o 5 Thin film requires high temperature melting V 2 o 5 Powder, long aging time, long preparation cycle, rough and porous films, low quality problems, and provide a method for preparing vanadium pentoxide films by sol-gel method

Method used

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  • A kind of method that sol-gel method prepares vanadium pentoxide film
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  • A kind of method that sol-gel method prepares vanadium pentoxide film

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specific Embodiment approach 1

[0025] Embodiment 1: The method for preparing vanadium pentoxide thin film by a sol-gel method described in this embodiment is carried out according to the following steps:

[0026] 1. Preparation of V 2 O 5 Sol:

[0027] Add VOCl to absolute ethanol 3 liquid, stir evenly, let stand for 5min~20min, get VO(OC 2 H 5 ) 3 solution, under stirring conditions, to VO(OC 2 H 5 ) 3 Distilled water was added dropwise to the solution and stirred to obtain V 2 O 5 Sol, finally aged to give aged V 2 O 5 sol;

[0028] The VOCl 3 The molar ratio of liquid to absolute ethanol is 1:(100~400); the VOCl 3 The molar ratio of liquid to distilled water is 1:(5~50);

[0029] 2. Deposition of film:

[0030] ①、Using the film forming method, the aged V 2 O 5 The sol is formed into a film on the substrate, and then heat-treated for 0.5h to 1.5h at a temperature of 100°C to 300°C to obtain a single layer of V 2 O 5 film;

[0031] The substrate is obtained by successively ultrasonic c...

specific Embodiment approach 2

[0039] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is: in step 1, under the stirring condition of the rotation speed of 50 rpm to 200 rpm, the VO(OC) 2 H 5 ) 3 Distilled water was added dropwise to the solution. Others are the same as the first embodiment.

specific Embodiment approach 3

[0040] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that: in step 1, under stirring conditions, the dripping rate is 0.05mL / s~2mL / s, and the VO(OC) 2 H 5 ) 3 Distilled water was added dropwise to the solution. Others are the same as in the first or second embodiment.

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Abstract

A method for preparing a vanadium pentoxide thin film by a sol-gel method, the invention relates to a method for preparing a vanadium pentoxide thin film. The present invention solves the problem of V prepared by existing vacuum evaporation method and sputtering method. 2 o 5 There are many oxygen vacancies in the film, poor process stability, low deposition rate, and low-valence vanadium oxides; the sol-gel method prepares V 2 o 5 Thin film requires high temperature melting V 2 o 5 Powder, aging time is long, preparation cycle is long, the film is usually rough and porous, and the quality is not high. Method: one, prepare V 2 o 5 Sol; 2. Deposition into film. The invention is used for preparing vanadium pentoxide film by sol-gel method.

Description

technical field [0001] The invention relates to a method for preparing a vanadium pentoxide thin film. Background technique [0002] V 2 O 5 can react with lithium to form lithium vanadate, and due to its special layered structure, V 2 O 5 When the film is used as the cathode material of lithium ion battery, it can make lithium ion battery have a battery capacity far higher than that of current commercial applications, and has broad application potential. V 2 O 5 The gas molecules adsorbed on the surface of the film will cause the state of the surface to change: through the interaction of hydrogen bonds and the vanadium oxide layer, its conductivity will change. V 2 O 5 The film can also be used for gas and humidity sensors. V 2 O 5 It has a semiconductor-metal phase transition, and is in a metallic state when the temperature is greater than 257 ° C. It has high reflectivity and low transmittance to infrared light, so that the laser cannot cause damage to the infr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G31/02
CPCC01G31/02C01P2004/04C01P2004/03C01P2002/85C01P2004/01C01P2004/20Y02E60/10
Inventor 吴宜勇吴蔚然朱睿健孙成月赵会阳
Owner HARBIN INST OF TECH
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