Unlock instant, AI-driven research and patent intelligence for your innovation.

Temperature sensor element

A temperature sensor and component technology, applied in thermometers, electrical components, resistors with negative temperature coefficients, etc., can solve problems such as thermistor hardness

Pending Publication Date: 2021-09-21
SUMITOMO CHEM CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since an inorganic semiconductor thermistor is hard, it is generally difficult to make a temperature sensor element using the inorganic semiconductor thermistor flexible.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature sensor element
  • Temperature sensor element
  • Temperature sensor element

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0178] (Manufacturing Example 1: Preparation of dedoped polyaniline)

[0179] The dedoped polyaniline is prepared by preparing hydrochloric acid doped polyaniline and dedoping it as shown in the following [1] and [2].

[0180] [1] Preparation of polyaniline doped with hydrochloric acid

[0181] 5.18 g of aniline hydrochloride (manufactured by Kanto Chemical Co., Ltd.) was dissolved in 50 mL of water to prepare a first aqueous solution. Separately, 11.42 g of ammonium persulfate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) was dissolved in 50 mL of water to prepare a second aqueous solution.

[0182] Next, the first aqueous solution was stirred at 400 rpm for 10 minutes using a magnetic stirrer while the temperature of the first aqueous solution was adjusted to 35° C., and then the second aqueous solution was added dropwise to the first aqueous solution at a rate of 5.3 mL / min while stirring at the same temperature. . After the dropwise addition, the reacti...

manufacture example 2

[0189] (Manufacturing example 2: Preparation of matrix resin 1)

[0190] According to the description of Example 1 of International Publication No. 2017 / 179367, 2,2'-bis(trifluoromethyl)benzidine (TFMB) represented by the following formula (3) was used as diamine, and tetracarboxylic 4,4'-(1,1,1,3,3,3-hexafluoropropane-2,2-diyl)diphthalic dianhydride (6FDA) represented by the following formula (4) of acid dianhydride ) to produce a polyimide powder having a repeating unit represented by the following formula (5).

[0191] The said powder was dissolved in propylene glycol 1-monomethyl ether 2-acetate so that the density|concentration might become 8 mass %, and the polyimide solution (1) was prepared. In the following examples, the polyimide solution (1) was used as the matrix resin 1 .

[0192]

manufacture example 3

[0193] (Manufacturing example 3: Preparation of matrix resin 2)

[0194] 4,4'-bis(4-aminophenoxy)biphenyl (BAPB) represented by the following formula (6) and 1,4-bis(4-amino) represented by the following formula (7) were used as diamines -α,α-Dimethylbenzyl)benzene (BiSAP), using 1,2,4,5-cyclohexanetetracarboxylic dianhydride (HPMDA) represented by the following formula (8) as tetracarboxylic dianhydride ). Then, make the molar ratio of BAPB:BiSAP:HPMDA 0.5:0.5:1, except that, obtain the polyimide solution according to the description of Synthesis Example 2 of JP-A-2016-186004, according to JP-A-2016 The polyimide powder was obtained as described in Example 2 of the -186004 publication.

[0195] The said powder was dissolved in (gamma)-butyrolactone so that the density|concentration might become 8 mass %, and the polyimide solution (2) was prepared. In the following examples, the polyimide solution (2) was used as the matrix resin 2 .

[0196]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided is a temperature sensor element containing a pair of electrodes and a temperature-sensitive film disposed so as to be in contact with the pair of electrodes, wherein the temperature-sensitive film contains fluorine atoms, in addition, the temperature-sensitive film includes a matrix resin and a plurality of electroconductive domains contained within the matrix resin, and the electroconductive domains contain an electroconductive polymer.

Description

technical field [0001] The invention relates to a temperature sensor element. Background technique [0002] A thermistor-type temperature sensor element including a temperature-sensitive film whose resistance value changes with temperature changes is conventionally known. Conventionally, inorganic semiconductor thermistors have been used as temperature sensitive films of thermistor-type temperature sensor elements. Since an inorganic semiconductor thermistor is hard, it is generally difficult to make a temperature sensor element using the inorganic semiconductor thermistor flexible. [0003] Japanese Patent Application Laid-Open No. 03-255923 (Patent Document 1) relates to a thermistor-type infrared detection element using a polymer semiconductor having NTC characteristics (Negative Temperature Coefficient; a characteristic that the resistance value decreases as temperature rises). This infrared detection element detects infrared rays by detecting a temperature rise caused...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/22H01C7/04
CPCC08L101/04G01K7/22G01K7/16H01C7/04C08L101/12H01C1/1413H01C7/049C08L79/08C08G73/1007C08G73/1039C08G73/1042C08G73/105C08G73/0266C08L79/02C08L2203/16C08L2203/20
Inventor 早坂惠美九内雄一朗
Owner SUMITOMO CHEM CO LTD