Temperature sensor film, electrically conductive film, and method for producing same

A technology of temperature sensor and conductive film, which is applied to thermometers, thermometers and instruments using electric/magnetic elements that are directly sensitive to heat, can solve the problems of complicated manufacturing process and rising cost, and achieve high temperature measurement accuracy and stability Excellent, high temperature coefficient of resistance effect

Pending Publication Date: 2021-10-01
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When measuring the temperature of multiple locations in the plane with thermocouples, chip thermistors, etc., it is necessary to arrange temperature sensors for each measurement point and connect each temperature sensor to a printed circuit board, etc., so the manufacturing process is complicated
In addition, in order to measure the temperature distribution in the plane, it is necessary to arrange multiple sensors on the substrate, which is a major factor of cost increase.

Method used

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  • Temperature sensor film, electrically conductive film, and method for producing same
  • Temperature sensor film, electrically conductive film, and method for producing same
  • Temperature sensor film, electrically conductive film, and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0087] Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the following examples.

[0088] [Evaluation method]

[0089]

[0090] Using a quadrupole secondary ion mass spectrometer ("PHI ADEPT-1010" manufactured by ULVAC-PHI. INC.), the primary ion species: Cs + , Acceleration energy: 2.0keV, grating area: 300μm×300μm, detection area: 100μm×100μm, through secondary ion mass spectrometry

[0091] (SIMS), and the concentration distribution (depth profile) in the depth direction from the surface of the conductive thin film (surface of the nickel layer) was measured. Set the Ni concentration to 1×10 19 atm / cm 3The above region was defined as a Ni layer, and the concentration of carbon atoms in the center in the thickness direction was defined as the carbon content of the nickel layer.

[0092]

[0093] The surface resistance was measured by the four-probe method using a resistivity mete...

Embodiment 1

[0116] Except having changed the board|substrate temperature into 0 degreeC, it carried out similarly to the comparative example 1, and produced the electroconductive thin film.

Embodiment 2

[0118] On the PET film, a silicon layer with a thickness of 5nm and a silicon oxide layer with a thickness of 10nm are sputtered into films successively as the base layer, and a Ni layer is formed on it under the same conditions as Comparative Example 1, and the PET film with Si layer (5nm), SiO 2 layer (10nm), Ni layer (70nm) conductive thin film. Si layer and SiO 2 A B-doped Si target was used for layer formation. For the Si layer, argon gas is introduced as the sputtering gas, at a substrate temperature of 150°C, a pressure of 0.3Pa, and a power density of 1.0W / cm 2 Film formation was performed by DC sputtering under certain conditions. For SiO 2 layer, in addition to argon as the sputtering gas, oxygen (O 2 / Ar=1.0), at a substrate temperature of 150°C, a pressure of 0.3Pa, and a power density of 1.8W / cm 2 Film formation was performed by DC sputtering under certain conditions. The magnetic flux density on the surface of the Si target was 100 mT.

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Abstract

An electrically conductive film (101) that is used to produce a temperature sensor film includes a thin nickel film (10) on one primary surface of a resin film substrate (50). The carbon atom density in the thin nickel film is preferably 1.0*1021 atom / cm3 or less. The half value width of a diffraction peak of the (111) face of nickel in an X-Ray diffraction pattern of the thin nickel film is preferably 0.4 degree or less. The temperature sensor film is obtained by patterning the thin nickel film so as to form a thermometric resistor part and a lead part that is connected to the thermometric resistor part.

Description

technical field [0001] The present invention relates to a temperature sensor thin film provided with a patterned metal thin film on a thin film substrate, and a conductive thin film used in the production of the temperature sensor thin film. Background technique [0002] A large number of temperature sensors are used in electronic equipment. As a temperature sensor, it is usually a thermocouple or a chip thermistor. When measuring the temperature of multiple locations in the plane with thermocouples, chip thermistors, etc., it is necessary to arrange temperature sensors for each measurement point and connect each temperature sensor to a printed circuit board, etc., so the manufacturing process is complicated. In addition, in order to measure the temperature distribution in the plane, it is necessary to arrange a plurality of sensors on the substrate, which becomes a factor of cost increase. [0003] Patent Document 1 proposes a temperature sensor thin film in which a metal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/18
CPCG01K7/16G01K7/18G01K7/183G01K7/186G01K7/20G01K2007/163G01K2217/00
Inventor 宫本幸大中岛一裕安井智史
Owner NITTO DENKO CORP
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