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Preparation method of refrigeration type GaN electron source used in ultrahigh vacuum system

An ultra-high vacuum and cooling technology, which is applied to discharge tubes, circuits, and discharge lamps that do not contain gas ionization, can solve problems such as reduced service life, damage to GaN samples, and high power density of laser light, and achieve the goal of improving service life Effect

Inactive Publication Date: 2021-10-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0003] Negative electron affinity GaN-based electron source has a high laser light power density during operation. Long-term laser irradiation will increase the temperature of the GaN surface, and too high a temperature will destroy the cesium and oxygen active layers on the surface, and even damage the GaN sample. , thereby reducing its service life

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  • Preparation method of refrigeration type GaN electron source used in ultrahigh vacuum system

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Embodiment

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] GaN samples were ultrasonically cleaned with carbon tetrachloride, acetone, absolute ethanol and deionized water for 5 min.

[0027] The sample was then treated with concentrated H at a volume ratio of 4:1:1 2 SO 4 , H 2 o 2 Mix the solution with deionized water and wash at 90°C for 10 minutes.

[0028] Ultrasonic cleaning with deionized water for 5 min to complete the chemical cleaning.

[0029] Set the maximum temperature to 710°C under ultra-high vacuum conditions.

[0030] The set temperature increases linearly from 0°C to 200°C in the first 20 minutes, from 20 to 80 minutes, the set temperature increases linearly from 200°C to 550°C, from 80 to 160 minutes, the set temperature increases linearly from 550°C to 710°C, from 160 ~180min, the temperature is stable at 710°C, from 180~240min, the set temperature drops linearly from 7...

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Abstract

The invention provides a preparation method of a refrigeration type GaN electron source used in an ultrahigh vacuum system. According to the preparation method of the refrigeration type GaN electron source, an indium welding technology is mainly utilized, after the surface of GaN is cleaned by adopting chemical cleaning and thermal annealing processes, a GaN sample is welded with a semiconductor refrigeration sheet and a thermocouple, and then GaN is activated by utilizing a cesium and oxygen activation process to reach a negative electron affinity surface, so that the preparation of the electron source is completed. According to the method, the temperature rise rate of the cathode is slowed down through the semiconductor refrigeration technology, the method has the advantages of being small in size, good in controllability, high in reliability and the like, and the service life of the negative electron affinity GaN electron source used in the ultrahigh vacuum system can be effectively prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a cooling GaN electron source used in an ultra-high vacuum system. Background technique [0002] Gallium nitride (GaN) material is an extremely stable semiconductor material with excellent properties such as wide band gap, low dielectric constant, corrosion resistance, high temperature resistance, and radiation resistance. Negative electron affinity GaN-based photocathode has the advantages of high quantum efficiency, small dark current, and concentrated energy distribution of emitted electrons. It is a new type of high-performance ultraviolet photocathode. It is widely used in fields such as printing and electron microscopy. [0003] Negative electron affinity GaN-based electron source has a high laser light power density during operation. Long-term laser irradiation will increase the temperature of the GaN surface, and too high a temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/34H01J40/06H01J7/24H01J9/12
CPCH01J1/34H01J40/06H01J7/24H01J9/12
Inventor 李嘉璐张依辰全卓艺其他发明人请求不公开姓名
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA