Filtering film system and near infrared spectrum chip based on double glass hole arrays and preparation method thereof
A technology of near-infrared spectroscopy and double-hole arrays, which is applied in the fields of optical filters, spectrometry/spectrophotometry/monochromators, optics, etc., can solve problems such as difficult practical applications and indistinguishable photoelectric detection modules, etc. To achieve the effect of continuous modulation
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[0037] The preparation method of the near-infrared spectrum chip based on the filter film system of the double glass hole array is characterized in that it comprises the following steps:
[0038] S1: Select two pieces of quartz glass that match the size of the detector, and the transmittance T of the quartz glass in the near-infrared band of 1-2 μm is ≥ 90%; one is used as the lower plating plate, and the other is used as the cover plate;
[0039] S2: Deposit a silver film with a thickness of 100nm-500nm on the lower accompanying plate by evaporation;
[0040] S3: Using focused ion beam lithography on the silver film to etch a hole array, the hole array includes a period P and an aperture r, where:
[0041] P=0.66λ-0.025................................1.1
[0042] r=0.2p+0.02................................1.2
[0043] λ is the preset transmission peak wavelength; according to the requirements of the filter chip, the silver film is partitioned, and different regions use diff...
Embodiment 1
[0053] It is required that the λ transmission peak wavelengths are 1.25μm, 1.40μm, 1.55μm, and 1.70μm. Four kinds of transmission peak structures are required, and the detector uses a 30*30mm InGaAs image sensor chip.
[0054] The preparation method of the near-infrared spectrum chip based on the filter film system of the double glass hole array:
[0055] S1: Select two pieces of quartz glass of 30*30mm, the transmittance of said quartz glass in the near-infrared band of 1-2μm is T≥90%; one is used as the lower plating plate, and the other is used as the cover plate;
[0056] S2: Deposit a silver film with a thickness of 200nm (thickness should be greater than the skin depth of silver in the near-infrared band) by evaporation method on the lower accompanying plate;
[0057] S3: Using focused ion beam lithography on the silver film to etch a hole array, the hole array includes a period P and an aperture r, where:
[0058] P=0.66λ-0.025................................1.1
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