Transfer method for achieving smooth self-supporting film through external pressure and self-supporting film

Abstract

The invention discloses a transfer method for achieving smooth self-supporting film through external pressure and a self-supporting film obtained through the method. The transfer method of the self-supporting film comprises the steps: a target substrate and a to-be-transferred film are clamped through an aluminum clamp, adequate attachment of the to-be-transferred film and a target contrast is achieved, then the clamp is soaked in deionized water, and the self-supporting film adsorbed on the target substrate is obtained; the clamp is placed in nitrogen flow, and water stains near the clamp and the target substrate are removed; and the clamp is detached, the obtained self-supporting film attached to the target substrate is subjected to ultrasonic treatment in acetone, isopropanol and deionized water, and the self-supporting film is obtained. According to the two-dimensional ultrathin perovskite thin film, a strontium titanate substrate is adopted, the film is barium titanate, and the target substrate is a silicon substrate; and according to the method, the smoothness of the self-supporting film can be improved, and the transfer area of the self-supporting film is greatly increased.

Description

technical field [0001] The invention relates to the technical field of self-supporting oxide film transfer, in particular to a flat self-supporting film transfer method realized by external pressure and a self-supporting film obtained by the method. Background technique [0002] For transition metal oxide perovskites, the rich properties including giant magnetoresistance and multiferroicity generated by strongly interacting electrons in d orbitals have attracted extensive attention in the past nearly a century. By using a water-soluble sacrificial layer, the preparation of self-supporting two-dimensional perovskite films can be realized. The new fundamental properties exhibited by this 2D material support the development of multifunctional electronic devices. free-standing strontium titanate (SrTiO 3 ) two-dimensional film as an example, the transferred two-dimensional strontium titanate film can exhibit pure in-plane ferroelectric polarization under the condition of exter...

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Problems solved by technology

[0006] In order to overcome problems such as the inability to maintain atomic-level flatness and the need to use adhesives during the preparation of self-supporting films, the present invention provides a method for realizing the transfer of two-dimensional self-supporting films by applying external pressure, avoiding the intervention of organic substances, and obtaining The two-dimensional self-supporting film that is tightly bonded to the silicon wafer can transfer a film with a clean surface, a large effective area, and good flatness in a short period of time

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