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Grid electrode and source electrode parallel connection adjustable resistance type super junction power device and manufacturing method thereof

A technology of power devices and manufacturing methods, which is applied in the field of gate-source parallel adjustable resistance super-junction power devices and their manufacturing, and can solve problems such as increased circuit design and manufacturing costs, reduced circuit versatility, and resistance failure. Achieve the effects of reducing cost expenditure, improving versatility, and increasing application range

Active Publication Date: 2021-11-12
重庆万国半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In circuit applications, super junction power devices need to connect an additional resistor in parallel between the gate and the source to avoid the power device from being turned on accidentally due to the leakage current in the circuit, and at the same time, the electrostatic protection structure of the gate protects the gate from Damage from external static electricity, however, this structure will increase the cost of circuit design and manufacturing by adding additional parallel resistors, and will also introduce the risk of resistor failure caused by abnormal circuit manufacturing processes. In addition, the parallel resistors will be used according to circuit performance requirements. The resistance value, the use of fixed resistance resistance will reduce the versatility of the circuit, therefore, further improvement is required

Method used

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  • Grid electrode and source electrode parallel connection adjustable resistance type super junction power device and manufacturing method thereof
  • Grid electrode and source electrode parallel connection adjustable resistance type super junction power device and manufacturing method thereof

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Experimental program
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Embodiment 1

[0052] see figure 1 and figure 2 , in an embodiment of the present invention, a method for manufacturing a gate-source parallel adjustable resistance super-junction power device includes the following steps:

[0053] Step S1, chemical vapor deposition of an intrinsic epitaxial layer 2 on the surface of the silicon substrate 1; doping the intrinsic epitaxial layer 2 with pentavalent elements by ion implantation; the pentavalent elements include arsenic and phosphorus, in this implementation An example is specifically arsenic.

[0054] Step S2 , depositing a mask on the upper surface of the intrinsic epitaxial layer 2 , the composition of the mask is photoresist or a multilayer composite structure composed of photoresist and other insulator masks.

[0055] Step S3, defining the pattern of the columnar doped region 3 on the mask through a photolithography process; doping the intrinsic epitaxial layer 2 with trivalent element boron through ion implantation; and then removing th...

Embodiment 2

[0077] see figure 1 and figure 2 , in an embodiment of the present invention, a method for manufacturing a gate-source parallel adjustable resistance super-junction power device includes the following steps:

[0078] Step S1, chemical vapor deposition of an intrinsic epitaxial layer 2 on the surface of the silicon substrate 1; doping the intrinsic epitaxial layer 2 with pentavalent elements by ion implantation; the pentavalent elements include arsenic and phosphorus, in this implementation An example is specifically phosphorus element.

[0079] Step S2 , depositing a mask on the upper surface of the intrinsic epitaxial layer 2 , the composition of the mask is photoresist or a multilayer composite structure composed of photoresist and other insulator masks.

[0080] Step S3, defining the pattern of the columnar doped region 3 on the mask through a photolithography process; doping the intrinsic epitaxial layer 2 with trivalent element boron through ion implantation; and then ...

Embodiment 3

[0102] see figure 1 and figure 2 , in an embodiment of the present invention, a method for manufacturing a gate-source parallel adjustable resistance super-junction power device includes the following steps:

[0103] Step S1, chemical vapor deposition of an intrinsic epitaxial layer 2 on the surface of the silicon substrate 1; doping the intrinsic epitaxial layer 2 with a trivalent element by ion implantation; the trivalent element includes boron, specifically in this embodiment for the boron element.

[0104] Step S2 , depositing a mask on the upper surface of the intrinsic epitaxial layer 2 , the composition of the mask is photoresist or a multilayer composite structure composed of photoresist and other insulator masks.

[0105] Step S3, defining the pattern of the columnar doped region 3 on the mask through a photolithography process; doping the intrinsic epitaxial layer 2 with pentavalent elements through ion implantation, the pentavalent elements including arsenic and ...

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Abstract

The invention relates to the field of power device semiconductor manufacturing, and discloses a manufacturing method of a grid electrode and source electrode parallel connection adjustable resistor type super junction power device. The manufacturing method comprises the following steps: A, preparing a super junction power device cellular structure and a grid electrode and source electrode parallel connection adjustable resistor structure; B, preparing a contact hole; C, preparing a metal wire; and D, preparing a passivation layer. The invention further discloses the grid electrode and source electrode parallel connection adjustable resistance type super junction power device produced by the manufacturing method. According to the invention, resistors which need to be connected in parallel between the grid electrode and the source electrode in an external mode in the application of the power device are directly integrated in the power device, so that the integration level and the stability of the device are improved, the complexity of circuit design is simplified, the circuit design and manufacturing cost is saved, the layout change of the grid electrode, the contact through hole and the metal wire layer and the remanufacturing of the mask plate caused by the application requirements of parallel resistors between different grid electrodes and source electrodes are avoided, the cost expenditure is reduced, and the universality of the device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing of power devices, in particular to a grid-source parallel adjustable resistance super-junction power device and a manufacturing method thereof. Background technique [0002] Compared with traditional power devices, super-junction power devices introduce super-junction structures to reduce the on-resistance by 50% to 65% under the premise of achieving the same withstand voltage, which effectively reduces power consumption and improves the efficiency of system products, especially in high-power power supplies. In terms of products, its advantages are more prominent. [0003] In circuit applications, super junction power devices need to connect an additional resistor in parallel between the gate and the source to avoid the power device from being turned on accidentally due to the leakage current in the circuit, and at the same time, the electrostatic protection structure of the gate protect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L23/522H01L23/50H01L21/336
CPCH01L29/0634H01L23/50H01L23/5226H01L29/0684H01L29/66568H01L28/20H01L29/7803H01L29/66712H01L21/0262H01L21/31144H01L21/31155H01L21/3213H01L29/0688
Inventor 胡玮
Owner 重庆万国半导体科技有限公司