Quaternary ammonium base-free cleaning solution

Abstract

The invention relates to a quaternary ammonium base-free cleaning solution. The cleaning solution is prepared from the following raw materials in percentage by mass: 1-20% of guanidine or guanidine derivatives, 1-20% of alkanolamine, 0.01-10% of a nitrogen-containing heterocyclic compound metal corrosion inhibitor and 60-99% of water. The cleaning solution disclosed by the invention does not contain quaternary ammonium base and easily-decomposed antioxidant metal inhibitors, has relatively high environmental stability, is capable of removing efficient copper surface organic residues and grinding particles , has relatively low copper corrosion rate and copper surface roughness, and does not generate adsorption on the copper surface.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning solution free of quaternary ammonium alkali. Background technique [0002] With the rapid development of VLSI, the manufacturing process of integrated circuits has become more and more complex and sophisticated. During wafer fabrication, chemical mechanical polishing (CMP) has become the dominant technique for planarizing semiconductor wafers. Metal chemical mechanical polishing fluids generally contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. Among them, the abrasive particles are mainly abrasive particles such as silicon dioxide, aluminum oxide, and cerium oxide according to the application. During the polishing process of chemical mechanical planarization, a large number of fine abrasive particles and chemical additives in the polishing liquid, as well as debris peeled off by wafer abrasion, may...

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Problems solved by technology

[0008] Also, some antioxidant blockers such as ascorbic acid and gallic acid are unstable in an alkaline environment and decompose, causing color changes in cleaning product

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