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Positive photoresist composition with high film residue rate, synthesis method of composition and cured film

A photoresist and composition technology, which is applied in the field of high residual film rate positive photoresist composition and its synthesis method and cured film field, can solve the problem that the adhesion and residual film rate of the photoresist composition cannot be improved, swelling Or film and substrate delamination, etc., to improve the adhesion and residual film rate, and improve the effect of delamination

Active Publication Date: 2021-11-19
深圳迪道微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the cured film is immersed in or in contact with an organic solvent, acid, alkali, etc., it is prepared from a conventional high-residue positive-type photoresist composition including such a siloxane copolymer The planarization film or the display device using it may have problems such as swelling or delamination of the film from the substrate
That is, the adhesion and residual film rate of the photoresist composition cannot be improved to a satisfactory level

Method used

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  • Positive photoresist composition with high film residue rate, synthesis method of composition and cured film
  • Positive photoresist composition with high film residue rate, synthesis method of composition and cured film
  • Positive photoresist composition with high film residue rate, synthesis method of composition and cured film

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0063] Synthesis Example 1: Synthesis of Acrylic Copolymer A1 Containing Fluorinated Alkanes and Siloxane Groups

[0064] Into a flask equipped with a cooling tube and a stirrer, 200 parts by weight of propylene glycol methyl ether acetate was charged as an organic solvent, and the temperature of the organic solvent was raised to 70° C. while slowly stirring the organic solvent. Next, 50 parts by weight of styrene, 15 parts by weight of acryloxypropyltrimethoxysilane, 15 parts by weight of tetrafluoropropyl methacrylate, and 15 parts by weight of methacrylic acid were added thereto, followed by successive additions over 6 hours. 5 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) was added dropwise as a radical polymerization initiator to perform a polymerization reaction. Then, the resulting product was diluted with propylene glycol methyl ether acetate so that the solid content was 32% by weight. An acrylic copolymer having a weight average molecular weight of about...

Synthetic example 2

[0065] Synthesis Example 2: Synthesis of Acrylic Copolymer A2 Containing Fluorinated Alkanes and Siloxane Groups

[0066] Into a flask equipped with a cooling tube and a stirrer, 200 parts by weight of propylene glycol methyl ether acetate was charged as an organic solvent, and the temperature of the organic solvent was raised to 70° C. while slowly stirring the organic solvent. Next, 50 parts by weight of styrene, 15 parts by weight of γ-methacryloxypropyltrimethoxysilane, 15 parts by weight of octafluoropentyl methacrylate and 15 parts by weight of methacrylic acid were added thereto, followed by 5 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) was added dropwise over 6 hours as a radical polymerization initiator to perform a polymerization reaction. Then, the resulting product was diluted with propylene glycol methyl ether acetate so that the solid content was 32% by weight. An acrylic copolymer having a weight average molecular weight of about 9,000 to 11,000 D...

Synthetic example 3

[0067] Synthesis example 3: Synthesis of acrylic copolymer A3 without fluoroalkane and siloxane groups

[0068] Into a flask equipped with a cooling tube and a stirrer, 200 parts by weight of propylene glycol methyl ether acetate was charged as an organic solvent, and the temperature of the organic solvent was raised to 70° C. while slowly stirring the organic solvent. Next, 50 parts by weight of styrene, 30 parts by weight of methyl methacrylate and 15 parts by weight of methacrylic acid were added thereto, and then 5 parts by weight of 2,2'-azobis(2,4 -dimethylvaleronitrile) as a free radical polymerization initiator to carry out the polymerization reaction. The resulting product was then diluted with propylene glycol methyl ether acetate so that the solids content was 35% by weight. An acrylic copolymer having a weight average molecular weight of about 9,000 to 11,000 Da is obtained.

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Abstract

The invention relates to a positive photoresist composition with high film residue rate, a synthesis method of the composition and a cured film. The positive photoresist composition comprises an organic solvent and 10 wt%-70 wt% of solute dissolved in the solvent, the solute comprises 100 parts by weight an acrylic copolymer containing fluorine alkane and siloxane groups, a siloxane copolymer and 2-30 parts by weight of a 1, 2-quinonediazide compound . The positive photoresist composition with the high residual film rate comprises the acrylic copolymer and the siloxane copolymer, the acrylic copolymer and the siloxane copolymer are jointly used as an adhesive when the cured film is synthesized, and the acrylic copolymer contains siloxane groups and fluoroalkane at the same time, so that the residual film rate of the photoresist composition is increased, and meanwhile, when the cured film prepared from the photoresist composition is immersed in a solvent, an acid or an alkali or is in contact with the solvent, the acid or the alkali, the problem of swelling or layering of the film and a substrate is effectively overcome.

Description

technical field [0001] The invention relates to a positive-type photoresist composition with a high residual film rate, a synthesis method and a cured film thereof. Background technique [0002] LCDs or OLEDs with higher accuracy and resolution characteristics can be prepared by increasing the aperture ratio of the display device. According to this method, a transparent planarizing film is disposed as a protective film on a thin film transistor (TFT) substrate, which allows a data line and a pixel electrode to overlap, thereby improving an aperture ratio compared to a conventional method. To prepare such transparent planarizing films, several processing steps are employed to impart specific patterns. High residual positive photoresist compositions are widely used in this method because fewer processing steps are required. In particular, a high-residue positive-type photoresist composition containing a siloxane copolymer is well known for its high heat resistance, high tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/004
CPCG03F7/0757G03F7/0758G03F7/004
Inventor 陈旺康威康凯
Owner 深圳迪道微电子科技有限公司