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Cleaning method for removing chromatic aberration on the back of sapphire single-polishing substrate

A sapphire substrate and sapphire technology, applied in the direction of cleaning methods using liquids, cleaning methods using tools, cleaning methods and utensils, etc., can solve problems such as uneven cleaning of the surface of sapphire substrates, and achieve excellent settlement performance and excellent surface The effect of high activity and dilution ratio

Active Publication Date: 2022-07-12
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Purpose of the invention: Aiming at the problems existing in the prior art, the present invention provides a cleaning method for removing back chromatic aberration of sapphire single throw substrate, which solves the problem of back chromatic aberration caused by uneven cleaning of sapphire substrate surface, and reduces the need for PSS and epitaxy processes. Impact

Method used

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  • Cleaning method for removing chromatic aberration on the back of sapphire single-polishing substrate
  • Cleaning method for removing chromatic aberration on the back of sapphire single-polishing substrate

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Embodiment approach 1

[0026] This embodiment provides a cleaning method for removing chromatic aberration on the back of a sapphire single throw substrate, the steps are as follows:

[0027] S1: After the sapphire substrate is ground off the machine, use running water to rinse off the grinding sand on the surface, and then soak it in an alkaline cleaning agent with a pH of 12 for 25 minutes, and use a water gun to rinse off the floating sand and alkaline cleaning agent on the surface;

[0028] Wherein, the alkaline cleaning agent is composed of the following components by weight: 55% deionized water, 15% inorganic base, 12% chelating agent, 10% inorganic auxiliary, 6% organic base, and 2% organic auxiliary.

[0029] S2: Use a nylon brush to brush both sides of the sapphire substrate while spraying the active agent, and finally spray pure water to rinse off the active agent on the surface of the sapphire substrate and the nylon brush;

[0030] S3: After scrubbing the surface of the sapphire substrat...

Embodiment approach 2

[0038] This embodiment is substantially the same as Embodiment 1, and the only difference is:

[0039] In S1, the soaking time with alkaline cleaning agent is 30min.

[0040] After S5 and before S6, the polished surface of the sapphire substrate after single-side chemical polishing was also scrubbed with a 4-fold compressed wiper, and then the impurity deposits on the surface were rinsed with pure water.

[0041] Except for this, this embodiment is exactly the same as Embodiment 1, which is not repeated here.

[0042] like figure 2 Shown is the appearance picture of the sapphire substrate obtained by using the methods of the above-mentioned Embodiments 1 and 2. It can be seen that figure 1 In contrast, the color difference on the back is significantly improved.

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Abstract

The invention relates to the field of wafer processing, and discloses a cleaning method for removing chromatic aberration on the back of a sapphire single-polishing substrate. After the sapphire substrate is ground off the machine, running water is used to rinse off the grinding sand on the surface, and then the sapphire substrate is soaked in an alkaline cleaning agent for 20 minutes. After ‑30 minutes, use running water to wash off the floating sand and cleaning agent on the surface; while spraying the active agent, brush on both sides, and finally spray pure water to rinse off the active agent; after scrubbing the surface with a 2-4 times compressed wiper, the pure Wash surface impurities with water; use acid cleaning agent to soak for 800~1000s, then perform QDR cleaning; after drying, lamination, furnace, annealing, patch, single-sided chemical polishing, clean large particles on the surface by bubbling; brushing Remove dirt particles from the polished surface; use a technical sponge dipped in active agent to scrub the polished surface; remove wax and alkali cleaning. The invention solves the problem of the color difference on the back surface caused by the uneven cleaning of the surface of the sapphire substrate, and reduces the influence on the PSS and the epitaxy process.

Description

technical field [0001] The invention relates to the field of wafer processing, in particular to a cleaning method for removing chromatic aberration on the back of a single-polishing sapphire substrate, in particular to a cleaning method before and after annealing of a large-size sapphire substrate. Background technique [0002] α-Al 2 O 3 Single crystal, also known as sapphire, is a simple coordination oxide crystal with excellent optical properties, high mechanical strength, and stable chemical properties. Sapphire has a crystal structure similar to that of the LED light-emitting semiconductor GaN, which makes it the most widely used substrate material for LED chip manufacturing. [0003] Patterned Sapphire Substrate (PSS), that is, growing a mask on a sapphire substrate, engraving the mask with a standard photolithography process, etching the sapphire using an etching technology, and removing the mask, and then A semiconductor material such as GaN is grown on it, so tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B1/00B08B3/02B08B3/08B08B7/00B08B13/00H01L21/02
CPCB08B3/02B08B3/08B08B7/00B08B13/00H01L21/02057B08B1/143B08B1/12
Inventor 丁云海芦玲其他发明人请求不公开姓名
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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