The invention relates to the field of
wafer processing, and discloses a cleaning method for removing
chromatic aberration on the back of a
sapphire single-
polishing substrate. After the
sapphire substrate is ground off the
machine, running water is used to rinse off the
grinding sand on the surface, and then the
sapphire substrate is soaked in an alkaline
cleaning agent for 20 minutes. After ‑30 minutes, use running water to wash off the floating sand and
cleaning agent on the surface; while spraying the
active agent,
brush on both sides, and finally spray pure water to rinse off the
active agent; after scrubbing the surface with a 2-4 times compressed wiper, the pure Wash surface impurities with water; use acid
cleaning agent to soak for 800~1000s, then perform QDR cleaning; after
drying, lamination, furnace, annealing, patch, single-sided chemical
polishing, clean large particles on the surface by bubbling; brushing Remove
dirt particles from the polished surface; use a technical
sponge dipped in
active agent to scrub the polished surface; remove
wax and alkali cleaning. The invention solves the problem of the
color difference on the back surface caused by the uneven cleaning of the surface of the
sapphire substrate, and reduces the influence on the PSS and the
epitaxy process.