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Crystalline silicon cutting fluid as well as preparation method and application thereof

A technology of crystal silicon cutting and alcohols, which is applied in the field of crystal silicon cutting fluid and its preparation, and can solve problems such as high temperature, high surface friction, and lack of wettability

Active Publication Date: 2021-05-11
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the crystalline silicon cutting fluid used at home and abroad is mostly composed of ordinary polyether or acetylenic alcohol and a certain amount of defoamer. Although the existing cutting fluid can play a certain role in wetting and defoaming, it is used for cutting M12 crystalline silicon. The wettability is still lacking, the dynamic surface tension is not low enough, the ability to carry chips is weak, and it is easy to cause problems such as excessive surface friction, high temperature, and large TTV during cutting.

Method used

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  • Crystalline silicon cutting fluid as well as preparation method and application thereof
  • Crystalline silicon cutting fluid as well as preparation method and application thereof
  • Crystalline silicon cutting fluid as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0060] Take 200g of polymer block polyether, 100g of alcohol wetting agent A, 50g of alcohol wetting agent B, and 650g of deionized water;

[0061] Stir at room temperature for 5 minutes until clear and transparent;

[0062] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

Embodiment 2

[0064] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0065] Take 150g of polymer block polyether, 120g of alcohol wetting agent A, 30g of alcohol wetting agent B, and 700g of deionized water;

[0066] Stir at room temperature for 5 minutes until clear and transparent;

[0067] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

Embodiment 3

[0069] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0070] Take 250g of polymer block polyether, 150g of alcohol wetting agent A, 20g of alcohol wetting agent B, and 580g of deionized water;

[0071] Stir at room temperature for 5 minutes until clear and transparent;

[0072] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

[0073] The relevant experimental data of each embodiment of the present invention are as follows:

[0074] 43 wire cutting experimental data

[0075] Example Delivery rate Yield TTV Line marks silicon fall Failure rate Dirty condition Spill Example 1 99.80％ 99....

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Abstract

The invention discloses a crystal silicon cutting fluid. The crystal silicon cutting fluid comprises the following components including macromolecular block polyether, an alcohol wetting agent A and an alcohol wetting agent B, the macromolecular block polyether is a block copolymer of ethylene oxide, epoxypropane and epoxybutane; the alcohol wetting agent A is an alcohol modified by ethylene oxide and epoxypropane; and the alcohol wetting agent B is an alkynediol ethyoxyl compound modified by ethylene oxide, propylene oxide and epoxybutane. The crystal silicon cutting fluid provided by the invention has excellent wetting, cooling, lubricating, cleaning, chip carrying and low-foam properties, also has high permeability and antibacterial property, and can be recycled; the crystal silicon cutting fluid can effectively reduce TTV on the surface of a silicon wafer, reduce line marks, reduce friction between a diamond wire and the surface of the silicon wafer and improve the first-grade product rate; and in addition, the crystal silicon cutting fluid can effectively protect a diamond wire, reduce abrasion of the diamond wire, improve durability of the diamond wire and further improve productivity and economic benefits.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a crystalline silicon cutting fluid and a preparation method and application thereof. Background technique [0002] Zhonghuan Co., Ltd. has launched the 15-inch ultra-large silicon wafer "Kuafu" M12 series. The side length of M12 is 210mm and the diagonal is 295mm. Compared with the original 8-inch M2 silicon wafer, the surface area has increased by 80.5%, and the surface area of ​​G1 (158.75mm) silicon wafer has increased by 75%. %, compared with M4 (161.7mm) silicon wafer surface area increased by 71%, compared with M6 (166mm) silicon wafer surface area increased by 61%, greatly reducing LCOE (degree of electricity cost), will increase the profits of manufacturing enterprises. [0003] At present, the silicon wafer cutting process in the photovoltaic field mostly uses diamond wire cutting, which is a process in which silicon carbide micropowder is directly plated on a steel wire, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02B28D5/00C10N30/06C10N30/04C10N30/18C10N30/16
CPCC10M173/02B28D5/0076C10M2209/107C10M2209/104C10M2209/105C10M2209/106C10M2207/04
Inventor 邓舜马琦雯
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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