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Cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafer

A multi-wire cutting, solar-grade technology, used in lubricating compositions, petroleum industry, etc., can solve the problems of increased requirements for dispersibility and wettability, insufficient wetting and lubricating ability, edge collapse, and increased dirt, etc. To achieve the effect of excellent penetration, enhanced wettability, and excellent wetting effect

Active Publication Date: 2022-05-10
江苏美科太阳能科技股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Silicon wafer cutting is a key part of the solar photovoltaic cell manufacturing process. This process is used to process solid silicon ingots of monocrystalline silicon or polycrystalline silicon. In polysilicon wafer technology, there are two auxiliary materials that play a key role in the entire cutting process. One is diamond wire and the other is coolant. If the two cannot achieve a good synergy, various cutting defects or even disconnection risk
[0003] At present, in the cutting process of large-size and thin silicon wafers by diamond wire cutting, due to the high concentration of silicon powder in the cylinder cutting process, the requirements for the dispersion and wettability of silicon powder have increased significantly, and the conventional dispersants and wetting agents on the market cannot meet the requirements. On-site use requirements may easily cause broken lines and cuts caused by dirty chips, insufficient wetting and lubrication capabilities, resulting in increased data such as chromatic aberration, chipping, dirt, and line marks, and low yield rate

Method used

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  • Cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafer
  • Cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafer
  • Cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafers, which includes, in parts by weight, dispersant: 20 parts, wetting agent: 12 parts, and the balance is pure water. The above groups The sum of the points is 100.

[0024] In this example, the dispersant is a cyclodextrin polyether dispersant, with cyclodextrin as the initiator, grafted with ethylene oxide and propylene oxide polymers, the structure is as follows:

[0025]

[0026] Wherein, the degree of polymerization of polyoxyethylene ether is n=7, and the degree of polymerization of polyoxypropylene ether is m=4.

[0027] In this embodiment, the wetting agent is di-hanging glycol polyoxyethylene ether terminated by butylene oxide, and the initiator of the wetting agent is 1,7-heptanediol, 1,7-heptanediol A polymer grafted with ethylene oxide at both ends, and then capped with butylene oxide, the structure is as follows:

[0028]

[0029] Wherein,...

Embodiment 2

[0031] This embodiment provides a cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafers, which includes, in parts by weight, dispersant: 22 parts, wetting agent: 15 parts, and the balance is pure water. The above groups The sum of the points is 100.

[0032] In this example, the dispersant is a cyclodextrin polyether dispersant, with cyclodextrin as the initiator, grafted with ethylene oxide and propylene oxide polymers, the structure is as follows:

[0033]

[0034] Wherein, the degree of polymerization of polyoxyethylene ether is n=6, and the degree of polymerization of polyoxypropylene ether is m=4.

[0035] In this embodiment, the wetting agent is di-hanging glycol polyoxyethylene ether terminated by butylene oxide, and the initiator of the wetting agent is 1,8-octanediol, 1,8-octanediol A polymer grafted with ethylene oxide at both ends, and then capped with butylene oxide, the structure is as follows:

[0036]

[0037] Wherein, t...

Embodiment 3

[0039] This embodiment provides a cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafers, which includes, in parts by weight, dispersant: 18 parts, wetting agent: 20 parts, and the balance is pure water. The above groups The sum of the points is 100.

[0040] In this example, the dispersant is a cyclodextrin polyether dispersant, with cyclodextrin as the initiator, grafted with ethylene oxide and propylene oxide polymers, the structure is as follows:

[0041]

[0042] Wherein, the degree of polymerization of polyoxyethylene ether is n=8, and the degree of polymerization of polyoxypropylene ether is m=3.

[0043] In this embodiment, the wetting agent is di-hanging glycol polyoxyethylene ether terminated by butylene oxide, and the initiator of the wetting agent is 1,9-nonanediol, 1,9-nonanediol A polymer grafted with ethylene oxide at both ends, and then capped with butylene oxide, the structure is as follows:

[0044]

[0045] Wherein, t...

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Abstract

The invention discloses a cooling liquid suitable for multi-wire cutting of a solar-grade large-size silicon wafer, which comprises the following components in parts by weight: 18-25 parts of a dispersing agent, 10-20 parts of a wetting agent and the balance of pure water, and the sum of the components is 100 parts. The cooling liquid has the advantages of dispersion capability, good lubricating capability and good chelating effect on harmful components in cutting of large-size silicon wafers, and the wettability and fine foam control performance are effectively improved.

Description

technical field [0001] The invention relates to a cooling liquid, in particular to a cooling liquid suitable for multi-wire cutting of solar-grade large-size silicon wafers. Background technique [0002] Silicon wafer cutting is a key part of the solar photovoltaic cell manufacturing process. This process is used to process solid silicon ingots of monocrystalline silicon or polycrystalline silicon. In polysilicon wafer technology, there are two auxiliary materials that play a key role in the entire cutting process. One is diamond wire and the other is coolant. If the two cannot achieve a good synergy, various cutting defects or even Risk of disconnection. [0003] At present, in the cutting process of large-size and thin silicon wafers by diamond wire cutting, due to the high concentration of silicon powder in the cylinder cutting process, the requirements for the dispersion and wettability of silicon powder have increased significantly, and the conventional dispersants and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02C10N30/04C10N30/06
CPCC10M173/02C10N2030/04C10N2030/06C10M2209/12C10M2209/104
Inventor 陈卫东崔三观王艺澄
Owner 江苏美科太阳能科技股份有限公司
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