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Laminated composite GaAs-based photoelectric cathode with enhanced near-infrared response and preparation method of laminated composite GaAs-based photoelectric cathode

A photocathode, near-infrared technology, applied in the manufacture of light-emitting cathodes, cathode ray tubes/electron beam tubes, circuits, etc., can solve the problems of low quantum efficiency cathode materials, poor lattice matching, low quantum efficiency, etc., to improve the spectrum. Response and quantum efficiency, performance enhancement, effect of high quantum efficiency

Pending Publication Date: 2021-11-23
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, through the improvement of the cathode structure in the United States, the quantum efficiency of the prepared InGaAs photocathode has reached 1.2% at 1.06 μm, while the quantum efficiency of the transmissive InGaAs photocathode produced in China has only reached 0.005% at 1.06 μm. There is also a transmissive InGaAs photocathode The quantum efficiency of the photocathode reaches 0.76% at 1 μm. The main reason for the low quantum efficiency of the above InGaAs photocathode is the poor lattice matching of the cathode material and the high surface barrier of the cathode with a narrow bandgap, which greatly limits the emission efficiency of near-infrared photoelectrons.
In addition, the insufficient absorption rate of the InGaAs photocathode emission layer to the incident light in the near-infrared band also leads to its low quantum efficiency in the near-infrared band.

Method used

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  • Laminated composite GaAs-based photoelectric cathode with enhanced near-infrared response and preparation method of laminated composite GaAs-based photoelectric cathode
  • Laminated composite GaAs-based photoelectric cathode with enhanced near-infrared response and preparation method of laminated composite GaAs-based photoelectric cathode
  • Laminated composite GaAs-based photoelectric cathode with enhanced near-infrared response and preparation method of laminated composite GaAs-based photoelectric cathode

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preparation example Construction

[0049] Such as image 3 As shown, a method for preparing a laminated composite GaAs-based photocathode with enhanced near-infrared response, the specific steps are:

[0050] Step 1. On the substrate, sequentially grow GaAs buffer layer, In y al 1-y As linear gradient buffer layer, p-type In 0.19 al 0.81 As corrosion barrier layer, p-type variable composition variable doping In x Ga 1-x As emission layer, DBR reflection layer and p-type GaAs anti-reflection film contact layer;

[0051] Step 2, cleaning the p-type GaAs anti-reflection film contact layer, depositing a layer of anti-reflection film on the surface of the anti-reflection film contact layer, and thermally bonding the table glass window on the anti-reflection film;

[0052] Step 3, sequentially etch the substrate, GaAs buffer layer, In y al 1-y As linear gradient buffer layer, p-type In 0.19 al 0.81 As corrosion barrier layer, bare emitter layer In x Ga 1-x As surface;

[0053] Step 4. Through the ultra-h...

Embodiment 1

[0058] A stacked composite GaAs-based photocathode with enhanced near-infrared response. On a high-quality n-type GaAs substrate 22, MOCVD sequentially grows GaAs buffer layers 20, In y al 1-y As linear gradient buffer layer 18, p-type In 0.19 al 0.81 As corrosion barrier layer 16, p-type In x Ga 1-x As emission layer 14, DBR reflection layer 12 and anti-reflection film contact layer 10, the doping atoms of all epitaxial layers are Zn doping.

[0059] GaAs buffer layer 20 is intrinsic GaAs material, and direct epitaxial growth is on GaAs substrate 22, and thickness is 100nm, as substrate and In y al 1-y As the buffer material of the linear gradient buffer layer 18 .

[0060] In y al 1-yThe linear graded As buffer layer 18 is grown on the GaAs buffer layer 20 with a total thickness of 2500 nm and no doping is performed. The buffer layer is grown with a linearly graded composition, and the In composition increases linearly from 0 to 0.22 from bottom to top.

[0061] p-...

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Abstract

The invention discloses a laminated composite GaAs-based photoelectric cathode with enhanced near-infrared response and a preparation method of the laminated composite GaAs-based photoelectric cathode. The photoelectric cathode comprises a substrate, a GaAs buffer layer, an InyAl<1-y>As linear gradient buffer layer, a p-type In0.19Al0.81As corrosion barrier layer, a p-type InxGa<1-x>As variable-component variable-doping emission layer, a DBR reflecting layer and an antireflection film contact layer which are arranged from bottom to top, wherein the DBR reflecting layer is formed by alternately growing a GaAs layer and an AlAs layer according to a specific period. The p-type doped InxGa<1-x>As emission layer is composed of a plurality of sub-layers with different In components, and the In components in each sub-layer are gradually increased from 0.05 to 0.2 layer by layer from inside to outside. On the one hand, the lattice matching quality of an original InGaAs photoelectric cathode is improved through a variable-component growth technology, the photoelectric emission characteristic of the photoelectric cathode is improved, and the response of the photoelectric cathode in a full wave band is enhanced; and on the other hand, the DBR reflecting layer is introduced, so that the light absorption capacity of the photoelectric cathode on the near-infrared specific wavelength is greatly improved, and the quantum efficiency enhancement effect under the specific wavelength is further improved.

Description

technical field [0001] The invention belongs to the technical field of low-light night vision detection materials, in particular to a laminated composite GaAs-based photocathode with enhanced near-infrared response and a preparation method thereof. Background technique [0002] The GaAs-based photocathode is based on the theory of solid state physics and developed according to Spicer's photoemission "three-step model" theory. GaAs-based photocathode has the advantages of high quantum efficiency, small dark current, and large potential for long-wave response expansion, so it has been widely used in the field of modern low-light night vision technology and is an important component of low-light image intensifiers. In addition, because the GaAs-based photocathode has the advantages of high emission current density, concentrated emission electron energy and angle distribution, high electron spin polarizability, and small thermal emission, it can be used in electron beam plane ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J29/04H01J9/12
CPCH01J29/04H01J9/12
Inventor 张益军王自衡李姗李诗曼詹晶晶张锴珉钱芸生
Owner NANJING UNIV OF SCI & TECH