Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deep ultraviolet LED epitaxial structure and preparation method thereof

An epitaxial structure, deep ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor crystal quality and high dislocation density of AlGaN materials, improve crystal quality, reduce threading dislocations, and improve optoelectronic performance. Effect

Pending Publication Date: 2021-12-03
宁波安芯美半导体有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the disadvantages of high dislocation density and poor crystal quality of the AlGaN material of the deep ultraviolet LED epitaxial structure in the prior art, and to provide a preparation method of the deep ultraviolet LED epitaxial structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep ultraviolet LED epitaxial structure and preparation method thereof
  • Deep ultraviolet LED epitaxial structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The embodiment of the present invention provides an epitaxial structure and preparation method applied to deep ultraviolet light-emitting diodes. For the specific preparation steps, refer to Comparative Example 1. The difference is that the following steps are added after step S2 and between step S3: A flat substrate 1 with an AlN buffer layer 2 is put into a physical vapor deposition device, namely a PVD device, for plasma pretreatment, and nitrogen and oxygen are fed alternately in a pulsed manner. The input amount is 5sccm, the time is 5s, one cycle of nitrogen and oxygen is one cycle, and the number of pulse cycles is 10. The power of the alternating electric field applied to the chamber is 50W, the process temperature is 450°C, and the pressure is 4mTorr”;

[0043] Finally, a deep ultraviolet LED epitaxial structure 1 is produced.

Embodiment 2

[0045] The embodiment of the present invention provides an epitaxial structure and preparation method applied to deep ultraviolet light-emitting diodes. For the specific preparation steps, refer to Comparative Example 1. The difference is that the following steps are added after step S2 and between step S3: A flat substrate 1 with an AlN buffer layer 2 is placed into a physical vapor deposition device, namely a PVD device, for plasma pretreatment, and nitrogen and oxygen are introduced at the same time. The power of the alternating electric field applied to the cavity is 60W, the process temperature is 450°C, and the pressure is 4.5mTorr”;

[0046] Finally, a deep ultraviolet LED epitaxial structure 2 is produced.

[0047] The deep ultraviolet LED epitaxial structures prepared in Comparative Example 1 and Examples 1 and 2 were respectively subjected to XRD:002 twin crystal diffraction analysis and XRD:102 twin crystal diffraction analysis, the analysis diagram is as follows ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a deep ultraviolet LED epitaxial structure and a preparation method thereof. The preparation method comprises the following specific steps: providing a plain film substrate; growing an AlN buffer layer; performing plasma pretreatment on the AlN buffer layer; growing an AlN low-temperature layer; growing an AlN high-temperature layer; growing an n type AlGaN layer; growing an AlxGa1-xN / AlyGa1-yN multi-quantum well active layer; and growing an Mg-doped p-type AlGaN layer, an Mg-doped p-type AlGaN layer and an Mg-doped p-type GaN layer. The surface of the AlN buffer layer is bombarded by the plasma to lay a layer of gas atoms on the AlN buffer layer, and the polarity of the surface of the AlN buffer layer is changed by the layer of gas atoms laid on the AlN buffer layer, so that crystal atoms of AlN deposited and adsorbed on the AlN buffer layer subsequently are arranged in order, crystal defects in an epitaxial layer are reduced, the crystal quality of an AlN thin film is improved. The penetration dislocation is reduced, and the photoelectric property of the deep ultraviolet LED is improved.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a deep ultraviolet LED epitaxial structure and a preparation method thereof. Background technique [0002] With the development of LED applications, the market demand for ultraviolet LEDs is increasing. Ultraviolet LEDs with emission wavelengths covering 210-400nm have advantages that traditional ultraviolet light sources cannot match. Ultraviolet LEDs can not only be used in the field of lighting, but also can replace traditional ultraviolet mercury lamps containing toxic and harmful substances in biomedicine, anti-counterfeiting identification, air and water purification, biochemical detection, and high-density information storage. Under the current LED background , UV market prospects are very broad. [0003] At present, the epitaxial growth technology of ultraviolet LED is not mature enough, and the material preparation for growing high-performance ultraviolet LED is d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/06H01L33/32H01L33/14H01L33/00
CPCH01L33/12H01L33/06H01L33/32H01L33/14H01L33/0075H01L33/0095Y02P70/50
Inventor 丁涛周飚郭丽彬齐胜利
Owner 宁波安芯美半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com