Semiconductor structure and method

Abstract

This disclosure relates to a semiconductor structure (100), comprising a crystalline silicon substrate (110), having a surface (111), and a crystalline silicon oxide superstructure (120) on the surface (111) of the silicon substrate (110), the silicon oxide superstructure (120) having a thickness of at least two molecular layers and a (1 x 1) plane structure using Wood's notation.10.

Description

technical field [0001] The present disclosure relates to semiconductor structures and methods of forming the same. In particular, the present disclosure relates to silicon oxide structures for surface passivation of silicon-based semiconductor devices. Background technique [0002] Silicon is the most common substrate material in conventional semiconductor devices such as transistors, capacitors, diodes, photodiodes, and other types of microelectronic and photonic components. In all such devices, the interface quality of the substrate is of paramount importance. [0003] In conventional devices, the surface of a silicon substrate is usually passivated by growing a layer of thermal oxide on the surface. However, known oxidation methods result in an amorphous silicon oxide layer. The amorphous nature of this oxide layer leads to the presence of defect states on the passivated silicon surface. This inevitably degrades the performance of devices fabricated on conventional pa...

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Problems solved by technology

However, known oxidation methods result in an amorphous silicon oxide layer

The amorphous nature of this oxide layer leads to the presence of defect states on the passivated silicon surface

This inevitably degrades the performance of devices fabricated on conventional passivated substrates

Furthermore, conventional oxidation processes rely on relatively high processing temperatures, which may degrade the properties of silicon substrates and / or structures fabricated on such substrates

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