In-situ synthesis method of high-entropy silicide film with anti-oxidation characteristic
An in-situ synthesis, silicide technology, applied in the field of protective coatings, can solve the problems of difficult removal, high cost, easy oxygen pollution of powder, etc., and achieve the effect of preventing internal diffusion, slowing down the rate of oxidative corrosion, and enhancing mutual solubility.
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Embodiment 1
[0038] The preparation method of multi-component amorphous silicide protective coating, the steps are as follows:
[0039] (1) Target selection Select pure Ti, pure Nb, pure Mo, pure W, pure Al cutting combination as the sputtering target 1 connected to the target position connected to the DC power supply; pure Si target as the sputtering target 2. Connect to the target position connected with the RF power supply. The thickness of the target is 6mm, the diameter is 3 inches, and the target composition is 99.999%;
[0040] A single crystal silicon wafer is used as the coating substrate. Substrate cleaning: The substrate was ultrasonically treated with acetone, alcohol, and deionized water for 20 minutes, and then dried with a high-purity nitrogen air gun for later use;
[0041] When the chamber vacuum reaches 6×10 -4 When it is below Pa, feed high-purity argon gas, the gas flow rate of Ar is 20sccm, adjust the air pressure in the vacuum chamber to 1.5 Pa, turn on the RF rad...
Embodiment 2
[0044] The preparation method of multi-component amorphous silicide protective coating, the steps are as follows:
[0045] (1) Target selection Select pure Ti, pure Nb, pure Mo, pure W, pure Al cutting combination as the sputtering target 1 connected to the target position connected to the DC power supply; pure Si target as the sputtering target 2. Connect to the target position connected with the RF power supply. The thickness of the target is 6mm, the diameter is 3 inches, and the target composition is 99.999%;
[0046] A single crystal silicon wafer is used as the coating substrate. Substrate cleaning: The substrate was ultrasonically treated with acetone, alcohol, and deionized water for 20 minutes, and then dried with a high-purity nitrogen air gun for later use;
[0047] When the chamber vacuum reaches 6×10 -4 When it is below Pa, feed high-purity argon gas, the gas flow rate of Ar is 20 sccm, adjust the air pressure in the vacuum chamber to 1.5 Pa, turn on the RF ra...
Embodiment 3
[0050] The preparation method of multi-component amorphous silicide protective coating, the steps are as follows:
[0051] (1) Target selection Select pure Ti, pure Nb, pure Mo, pure W, pure Al cutting combination as the sputtering target 1 connected to the target position connected to the DC power supply; pure Si target as the sputtering target 2. Connect to the target position connected with the RF power supply. The thickness of the target is 6mm, the diameter is 3 inches, and the target composition is 99.999%;
[0052] A single crystal silicon wafer is used as the coating substrate. Substrate cleaning: The substrate was ultrasonically treated with acetone, alcohol, and deionized water for 20 minutes, and then dried with a high-purity nitrogen air gun for later use;
[0053] When the chamber vacuum reaches 6×10 -4 When it is below Pa, feed high-purity argon gas, the gas flow rate of Ar is 20sccm, adjust the air pressure in the vacuum chamber to 1.5 Pa, turn on the RF rad...
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