Resist underlayer film forming composition containing alicyclic compound-terminated polymer
A technology of resist lower layer and composition, which is applied in the photoplate-making process of patterned surface, photosensitive materials used in optomechanical equipment, instruments, etc., can solve the problems of active light diffuse reflection standing wave, etc., and achieve sensitivity improvement, Effect of LWR Deterioration Suppression
Pending Publication Date: 2021-12-14
NISSAN CHEM IND LTD
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Problems solved by technology
Along with this, the diffuse reflection of active light from the semiconductor substrate and the influence of standing waves have become major problems
Method used
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Embodiment 1
[0151] The above synthesis examples 1 to 9, comparative synthesis examples 1 to 2, polymer, crosslinking agent, curing catalyst, and solvent were mixed in the ratio shown in Table 1, and filtered with a 0.1 μm filter made of fluororesin, thereby respectively A solution of the composition for forming a resist underlayer film was prepared.
[0152] In Table 1, tetramethoxymethyl glycoluril (manufactured by Japan Cytech Indastries Co., Ltd.) is abbreviated as PL-LI, and pyridine - P-toluenesulfonic acid is abbreviated as PyPTS, and pyridine - P-hydroxybenzenesulfonic acid is abbreviated as PyPSA, propylene glycol monomethyl ether acetate is abbreviated as PGMEA, and propylene glycol monomethyl ether is abbreviated as PGME. Each addition amount is represented by mass parts.
[0153] [Table 1]
[0154] Table 1
[0155]
[0156] [Table 2]
[0157] Table 2
[0158]
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Abstract
The present invention provides: a composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the above-described resist underlayer film forming composition. The resist underlayer film forming composition which contains a polymer having, at an end, an aliphatic ring that may be substituted by a substituent, while having a carbon-carbon bond that may be interrupted by a heteroatom, and which additionally contains an organic solvent. The aliphatic ring is a monocyclic or polycyclic aliphatic ring having 3-10 carbon atoms. The polycyclic aliphatic ring is a bicyclo ring or a tricyclo ring.
Description
technical field [0001] The present invention relates to a composition usable in photolithography processes in semiconductor manufacturing, especially state-of-the-art (ArF, EUV, EB, etc.) photolithography processes. Furthermore, it relates to a method of manufacturing a substrate with a resist pattern to which the above-mentioned resist underlayer film is applied, and a method of manufacturing a semiconductor device. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a resist composition. The above-mentioned microfabrication is to form a thin film of a photoresist composition on a semiconductor substrate such as a silicon wafer, irradiate active light rays such as ultraviolet rays through a mask pattern on which a device pattern is drawn, and develop it to obtain a photoresist. A processing method in which a substrate is etched with a pattern of an agent as a protective fil...
Claims
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IPC IPC(8): C08G59/40G03F7/11H01L21/027
CPCH01L21/027C08G59/40G03F7/091G03F7/094G03F7/11G03F7/0045G03F7/0382G03F7/09G03F7/162G03F7/2004G03F7/325G03F7/38G03F7/40
Inventor 若山浩之水落龙太清水祥染谷安信
Owner NISSAN CHEM IND LTD