Method for modifying organic polymer material and modified organic polymer material

A kind of polymer material and organic technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve difficult and difficult to realize problems

Pending Publication Date: 2021-12-21
HUAZHONG UNIV OF SCI & TECH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with oxides, it is relatively more difficult to deposit or fill nitrides on organic polymer materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for modifying organic polymer material and modified organic polymer material
  • Method for modifying organic polymer material and modified organic polymer material
  • Method for modifying organic polymer material and modified organic polymer material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] This embodiment provides a method for modifying an organic polymer material and a modified organic polymer material. The specific steps are as follows:

[0082] Step 1: Use acetone, absolute ethanol and deionized water to ultrasonically clean the PDMS (polydimethylsiloxane) polymer membrane for 15 minutes, then dry it with nitrogen, place it in an inert gas environment, and use He plasma to clean it surface.

[0083] Step 2: Use the self-built plasma-enhanced atomic layer deposition equipment, place the cleaned PDMS film with a thickness of 1 micron in the atomic layer deposition reaction chamber of the above equipment, use a vacuum pump to vacuum the atomic layer deposition reaction chamber, and open the carrier. The gas control valve is used to feed 100 sccm carrier gas He into the atomic layer deposition reaction chamber, place trimethylaluminum in the source bottle of the atomic layer deposition equipment, and heat to 28°C.

[0084] Step 3: Control the temperature ...

Embodiment 2

[0092] This embodiment provides a method for modifying an organic polymer material and a modified organic polymer material. The difference from Embodiment 1 lies in that the precursor 1 is different and the process parameters are different. Specific steps are as follows:

[0093] Step 1: Use acetone, absolute ethanol and deionized water to ultrasonically clean the PDMS polymer membrane for 15 minutes, then dry it with nitrogen gas, place it in an inert gas environment, and use He plasma to clean the surface.

[0094] Step 2: Use self-built plasma-enhanced atomic layer deposition equipment, place the cleaned PDMS film in the atomic layer deposition reaction chamber of the above equipment, use a vacuum pump to vacuum the atomic layer deposition reaction chamber, open the carrier gas control valve, 100 sccm of carrier gas He was introduced into the atomic layer deposition reaction chamber, tris(dimethylamino)silane TDMAS was placed in the source bottle of the atomic layer deposit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for modifying organic polymer material and a modified organic polymer material. The method for modifying organic polymer material comprises the following steps: (1) placing the organic polymer material in an atomic layer deposition reaction chamber; (2) introducing a carrier gas into a precursor 1, sealing an atomic layer deposition reaction chamber for 180-600 seconds for the first time, and introducing an inert gas for purging and cleaning; and (3) introducing into a precursor 2 again, and sealing the atomic layer deposition reaction chamber for 180-600 seconds for the second time; wherein the precursor 2 is selected from ammonia plasma or mixed plasma of nitrogen and hydrogen. According to the invention, an ALD technology is utilized, a nitrogen-containing precursor is taken as a main raw material, a nitride is filled into the organic polymer material at proper filling depth and filling density, a film is formed on the surface of the organic polymer material, and the modified organic polymer material with better chemical and mechanical properties is obtained.

Description

technical field [0001] The invention relates to the technical field of material modification, in particular to a method for modifying organic polymer materials and modified organic polymer materials. Background technique [0002] The modification methods of organic polymer materials mainly include ion implantation technology, plastic filling modification technology, surface carburizing and nitriding technology, chemical vapor deposition technology and atomic layer deposition technology (ALD). [0003] Ion implantation refers to the use of a beam of ions in a vacuum to shoot at a solid material. When the ions are injected into the material, a series of physical and chemical interactions occur with the atoms or molecules in the material, gradually losing energy and slowly slowing down. Finally, Staying within the solid eventually causes changes in the surface composition, structure and properties of the material. Since the generation of ions requires high energy, when the hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/455C23C16/34C08J7/12C08L83/04
CPCC23C16/45527C23C16/45555C23C16/34C23C16/303C23C16/345C08J7/12C08J2383/04
Inventor 陈蓉林源李云张英豪
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products