Mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector and preparation method thereof

An infrared detector and heterojunction technology, which is used in electrical radiation detectors, semiconductor devices, and final product manufacturing, etc. problem, to achieve the effect of high working temperature, simple preparation process and high response rate

Pending Publication Date: 2021-12-21
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the current medium and long-wave dual-color infrared photodetectors require low operating temperature, and the overal

Method used

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  • Mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector and preparation method thereof
  • Mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector and preparation method thereof
  • Mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector and preparation method thereof

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Embodiment Construction

[0026] The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing:

[0027] The invention develops a room-temperature near-infrared / mid-infrared two-color infrared detector based on the combination of three-dimensional film materials and two-dimensional materials. The preparation step of the device is to use a buffered oxide etching solution prepared by a certain proportion of hydrofluoric acid and ammonium fluoride to etch the double-sided polished Si / SiO 2 , forming a Si window. Formation of PNP (NPN) heterostructures using non-destructively transferred low-dimensional material heterojunctions from polypropylene carbonate films to Si windows. The photoresist is used as a mask, and metal chromium (Cr) is deposited on it by thermal evaporation as an electrode. The phototransistor energy band structure is used to realize dual-band infrared signal detection, and the high absorbance of Si material is used as a near-inf...

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Abstract

The invention discloses a mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector and a preparation method thereof. The preparation method of the device comprises the following steps of: etching double-sided polished Si/SiO2 by utilizing buffer oxide etching liquid prepared from hydrofluoric acid and ammonium fluoride in a certain proportion to form a Si window; and forming a PNP (NPN) heterostructure by non-destructively transferring a two-dimensional Van der Waals material heterojunction to the Si window by using a polypropylene carbonate film. Dual-band infrared signal detection is realized by using a photoelectric triode energy band structure, and meanwhile, crosstalk is reduced by using a Si material with high absorbance as a near-infrared photosensitive material and a long-wave-pass filter, so that the dual-band infrared response of the device is improved. The mixed-dimension Van der Waals heterojunction room temperature two-color infrared detector has the advantages that a three-dimensional thin film material and the two-dimensional Van der Waals material are combined, near-infrared/mid-infrared room temperature detection is achieved, the manufacturing cost is low, the process is simple, preparation is easy, the detection rate is high, and the working temperature is high.

Description

technical field [0001] The invention relates to a mixed-dimensional van der Waals heterojunction room-temperature two-color infrared detector, which realizes near-infrared / mid-infrared dual-band infrared signal detection. At the same time, the high light absorption rate of Si material is used as a near-infrared photosensitive material and a long-wave pass filter to reduce crosstalk and improve the dual-band infrared response of the device. Specifically, it refers to the use of two-dimensional van der Waals materials and Si to form a heterojunction to realize simultaneous detection of dual-band infrared signals. Therefore, the sensitivity of the infrared detector to the temperature resolution ability of the infrared heat source is greatly improved, the responsivity and response speed of the device are improved, and signal crosstalk is reduced. Background technique [0002] Future warfare is an intelligent warfare dominated by information, centered on the network, and support...

Claims

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Application Information

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IPC IPC(8): H01L31/0232H01L31/032H01L31/11H01L31/18G01J5/10
CPCH01L31/1105H01L31/18H01L31/032H01L31/02327G01J5/10Y02P70/50
Inventor 胡伟达吴培松王鹏李庆张莉丽王芳谢润章苗金水王振贺婷付晓陈效双陆卫
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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