Preparation method of amorphous silicon heterojunction solar cell with monocrystalline silicon-like substrate
A solar cell and amorphous silicon technology, applied in the field of solar cells, can solve the problems of low conversion efficiency, low open circuit voltage of solar cells, and uncompetitive products, so as to improve minority carrier life, reduce lattice defects, and reduce defect density. Effect
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[0031] refer to figure 1 , a method for preparing an amorphous silicon heterojunction solar cell using monocrystalline silicon as a substrate, the method comprising the steps of:
[0032] S1, similar monocrystalline silicon wafers are subjected to mechanical damage layer treatment to remove oil stains and metal particle impurities on the surface; the chemical solution is an alkaline solution, which is one of KOH or NaOH, and the mass percentage of the alkaline solution is 3%-10 %, the mass percentage of deionization is 90%-97%, the treatment time of silicon wafers in alkaline solution is 1-5 minutes, the treatment temperature is 70°C-90°C, and the etching depth of silicon wafers is 5-20um;
[0033] S2. Deposit a layer of PSG on the surface of the silicon wafer and perform heat annealing treatment; perform PSG treatment by high-temperature annealing after phosphorus oxychloride diffusion. The depth range is 0.001um-10um, and a gradual cooling process is adopted;
[0034] S3, ...
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