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Island-shaped low-resistance channel memristive functional layer material, memristor and preparation method

A technology of functional layer and memristor, which is applied in the field of microelectronic devices, can solve the problems of unstable performance, complex process, high cost, etc., and achieve the effect of easy operation, simple process and low cost

Pending Publication Date: 2022-01-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In the above methods, there are either complex processes, high costs, or unstable performance. Therefore, it is necessary to develop a new type of low-resistance channel memristive functional layer material and memristor.

Method used

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  • Island-shaped low-resistance channel memristive functional layer material, memristor and preparation method
  • Island-shaped low-resistance channel memristive functional layer material, memristor and preparation method
  • Island-shaped low-resistance channel memristive functional layer material, memristor and preparation method

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Experimental program
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Embodiment 1

[0048] image 3 It is a flow chart of the entire memristor of the memristor in the embodiment of the present invention. It can be seen from the figure that the whole process is roughly divided into five steps, which will be described in turn below.

[0049] In the first step, the bottom electrode is prepared on the silicon substrate for subsequent two-dimensional material transfer. Specifically, the substrate is a Si substrate with a 300nm silicon oxide epitaxial layer. After cleaning with acetone and ethanol deionized water, AZ5214 photoresist is dropped on the silicon wafer, spin-coated with a coater, and then Pre-bake on a hot plate at 97°C for two minutes. Then, photolithography is carried out, and the electrode pattern on the mask plate is transferred to the photoresist, and the front exposure takes 1.2 seconds. Then, post-exposure was performed by placing the above-treated silicon wafer on a hot plate at 115° C. for 2 minutes. Then put the film under the photolithogra...

Embodiment 2

[0059] The difference between this embodiment and embodiment 1 is:

[0060] Step 3: performing oxidation annealing on the selenide layer, first annealing at 90° C. for 30 minutes in the atmosphere, and then annealing at 180° C. for 8 minutes in a vacuum environment to obtain an oxidation product layer.

Embodiment 3

[0062] The difference between this embodiment and embodiment 1 is:

[0063] Step 3: performing oxidation annealing on the selenide layer, first annealing at 90° C. in the atmosphere for 60 minutes, and then annealing at 220° C. for 12 minutes in a vacuum environment to obtain an oxidation product layer.

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Abstract

The invention provides an island-shaped low-resistance channel memristive functional layer material, a memristor and a preparation method, which belong to the field of microelectronic devices. The island-shaped low-resistance channel memristive functional layer material comprises a selenide layer and an oxidation product layer obtained by selenide in-situ oxidation on the selenide layer, the oxidation product layer is provided with a trigonal crystal cluster of selenium, the trigonal crystal cluster of selenium is distributed in an island shape in the oxidation product layer, and the oxygen vacancy conductive filament is communicated with the trigonal crystal cluster of selenium and the residual selenide part which is not oxidized. The memristor comprises a top electrode, a bottom electrode, a selenide layer, an oxidation product layer and a two-dimensional material layer, the bottom electrode is arranged on the selenide layer, the two-dimensional material layer is stacked on the oxidation product layer, the top electrode is arranged on the two-dimensional material layer, and the two-dimensional material layer can improve the contact characteristic of the oxidation product layer and the top electrode to form ohmic contact. The invention also provides a preparation method of the memristor. The threshold voltage consistency of the memristor can be improved, and the value of the threshold voltage can be reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to an island-shaped low-resistance path memristive functional layer material, a memristor and a preparation method. Background technique [0002] Memristors are considered to be the fourth passive basic circuit element after resistors, capacitors, and inductors. The resistance value of a memristor changes with the amount of charge flowing through it, and it can maintain its resistance state when the current is turned off, thereby realizing the non-volatile information storage function. After research, the non-volatile information storage function of the memristor makes it applicable to high-density information storage or non-volatile state logic operation. In addition, some memristors have the characteristics of continuously adjustable conductance, which makes them also applicable to brain-like neuromorphic computing as synaptic devices. Memristors ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/8825H10N70/826H10N70/021
Inventor 熊昌鹰缪向水徐明杨哲
Owner HUAZHONG UNIV OF SCI & TECH