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Packaging method of surface-mounted double-sided heat dissipation semiconductor power device

A technology of double-sided heat dissipation and power devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of affecting the performance of power devices, low heat dissipation efficiency of semiconductor device packaging, etc., and achieves convenient welding and the effect of rework

Pending Publication Date: 2022-01-14
重庆平伟伏特集成电路封测应用产业研究院有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a surface-mounted double-sided heat dissipation semiconductor power device packaging method, which is used to solve the problem of low heat dissipation efficiency of semiconductor device packaging in the prior art, which affects the performance of power devices. question

Method used

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  • Packaging method of surface-mounted double-sided heat dissipation semiconductor power device
  • Packaging method of surface-mounted double-sided heat dissipation semiconductor power device
  • Packaging method of surface-mounted double-sided heat dissipation semiconductor power device

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Embodiment Construction

[0045] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0046] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "upper"...

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Abstract

The invention provides a packaging method of a surface-mounted double-sided heat dissipation semiconductor power device. The packaging method comprises the following steps of: providing a lead frame and chips; applying soldering paste to the chips, and welding the chips to corresponding base islands through using the soldering paste; carrying out bonding, wherein the chips and pin parts are connected through copper sheets and are subjected to pressure welding; carrying out cleaning, namely cleaning the lead frame welded with the chips and the copper sheets; performing plastic packaging, namely packaging the pressure-welded lead frame by using a plastic packaging material to form a plastic packaging body, and only exposing the pins; carrying out grinding, namely grinding the upper surface of the plastic package body, and exposing the top copper sheet as a cooling fin; carrying out tinning, namely tinning the pins outside the plastic package body and the exposed copper sheets; and conducting rib cutting, testing, printing, packaging and delivering. The heat dissipation problem of the power device can be better solved, and the performance of the power device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a packaging method for a surface-mounted double-sided heat dissipation semiconductor power device. Background technique [0002] Power semiconductor devices are mainly used in new energy vehicles, server power supplies, BMS, switching power supplies, inverters and other fields, which have great room for development. At the same time, silicon carbide materials, gallium nitride materials and advanced packaging technologies are also developing vigorously. . [0003] At present, power semiconductor devices generally use thin-profile packages (TO-type packages), such as TO-220, TO-251, TO-263 and other packages, which are mainly used in medium and low voltage fields. In the field of medium and high voltage applications, the TO-247 package dominates. Compared with TO-220, TO-251, TO-263 and other packages, its base island has a larger base island, which can package a larger are...

Claims

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Application Information

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IPC IPC(8): H01L21/50H01L21/56H01L21/60H01L23/31H01L23/495H01L23/367
CPCH01L21/50H01L21/56H01L24/89H01L23/3107H01L23/49568H01L23/49541H01L23/49548H01L23/49562H01L23/49524H01L23/3677H01L2224/89
Inventor 夏大权马鹏余镇周玉凤徐向涛马红强王兴龙李述洲
Owner 重庆平伟伏特集成电路封测应用产业研究院有限公司
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