Electrostatic protection chip for quick charging management system and preparation method thereof

Abstract

The invention discloses an electrostatic protection chip for a quick charge management system, which comprises a substrate, a first epitaxial layer formed on the substrate, a first injection region on the first epitaxial layer, a second injection region on the first injection region, a second epitaxial layer on the second injection region, first grooves extending into the first epitaxial layer from the second epitaxial layer and filled with silicon oxide layers, second grooves formed between the first grooves and filled with third epitaxial layers, third injection regions formed in the third epitaxial layers, a fourth injection region formed in the second epitaxial layer, a first dielectric layer, a second dielectric layer, a first contact hole and a second contact hole formed between the first dielectric layer and the second dielectric layer, and a first metal layer arranged in the first contact hole and on the first dielectric layer, and a second metal layer arranged on the second dielectric layer and in the second contact hole. The invention further provides a preparation method of the electrostatic protection chip for the quick charging management system, the discharge density is improved, and the manufacturing cost of the device is also reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor chip manufacturing technology, and in particular relates to an electrostatic protection chip used in a fast charging management system and a preparation method thereof. Background technique [0002] As semiconductor devices are increasingly miniaturized, high-density, and multi-functional, electronic devices are increasingly vulnerable to voltage surges, which can even cause fatal injuries. Voltage surges ranging from electrostatic discharge to lightning can induce transient current spikes, and transient voltage suppressors (TVS) are often used to protect sensitive circuits from surges. Based on different applications, the transient voltage suppressor can protect the circuit by changing the surge discharge path and its own clamping voltage. [0003] The low-capacitance TVS structure is suitable for protection devices of high-frequency circuits, because it can reduce the interference of para...

AI Technical Summary

Problems solved by technology

Usually, in order to improve the reverse characteristics of TVS, a guard ring structure and a metal field plate structure are used, but these two structures are easy to introduce large additional capacitance, and increase the device area, resulting in a decrease in the working performance of the device.

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