Pulse-based single ion beam deposition process system

Abstract

The invention provides a pulse-based single ion beam deposition process system, the process system comprises the following steps of: 1 introducing working gas into a discharge chamber, and generating plasma under the double actions of air pressure and a magnetic field; 2 leading the ion beam out of a discharge chamber through a leading-out grid electrode. The ion beam auxiliary deposition system sequentially comprises a discharge chamber, an ion beam extraction grid, a focusing magnetic field, an ion energy selector, an energy adjusting electromagnetic field and a beam expanding magnetic field. The technology is mainly applied to the fields of optical film manufacturing and material research. In the film preparation or growth process, a single-energy ion beam is adopted to bombard a growing film, so that the film layer is more compact, the adhesive force with a substrate is enhanced, and the film forming quality is improved; by utilizing the technology, a metal reflective film, a prism color separation film, an antireflection film, a filter film, an anti-electromagnetic insulating film, a large-area ultraviolet laser high-reflective film and the like with good performance can be plated.

Description

technical field [0001] The invention relates to the technical field of ion beam emission sources, in particular to a pulsed single ion beam deposition process system. Background technique [0002] In the field of optical thin films, ion beam assisted deposition (IBAD) is an optical surface coating technology that combines thin film deposition and ion bombardment. Usually, energetic ions are used to bombard the film being deposited in a high vacuum to obtain a special effect film. The main process based on the pulsed single ion beam deposition process system is to bombard the substrate with a certain energy ion beam before coating to purify the surface, decompose and remove the hydrocarbons polluted on the surface, and at the same time increase the temperature of the substrate to provide surface activation. for thin film nucleation. [0003] Due to the momentum transfer of foreign ions to the particles in the agglomeration, the mobility of the film material particles on the...

AI Technical Summary

Problems solved by technology

That is to say, the ion beam extracted from the ion source contains ions with different energies per unit time, which is not conducive to the preparation of high-quality optical thin films to a certain extent.

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