Unlock instant, AI-driven research and patent intelligence for your innovation.

Method, chip and device for preparing SiO2 film

A thin-film, high-frequency technology, applied in the field of preparing SiO2 thin films, can solve the problems of small stress adjustment range of thin films, easy absorption of water vapor by thin films, rising dark current of detectors, etc. high effect

Pending Publication Date: 2022-02-01
浙江光特科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing detector chips use silane (SiH 4 ) and laughing gas (N 2 0) as raw material and grow SiO with pure high frequency (HF) 13.56MHz 2 thin film, the growth process SiO 2 When the film is exposed to high temperature and heat for a long time, SiO 2 The film is easy to absorb water vapor, which causes the dark current of the detector to rise
and pure high frequency grown SiO 2 Thin film, the range of stress adjustment of the grown film is small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A kind of preparation SiO proposed in this embodiment 2 Thin film method, using PECVD deposition method to prepare SiO 2 film.

[0024] High frequency and low frequency are alternately deposited, wherein the high frequency frequency is 13.56MHz; the low frequency frequency is 100KHz.

[0025] The high frequency power is 35W, and the low frequency power is 35W.

[0026] The deposition gas pressure is 900-1600mtorr, and the deposition gas is mixed gas and laughing gas, wherein the flow ratio of mixed gas and laughing gas is 90-300:600-800; the mixed gas includes silane and nitrogen, and the silane The volume ratio is 5%. In this embodiment, the flow rate of the mixed gas is 110 sccm, and the flow rate of the laughing gas is 710 sccm. Select the appropriate flow ratio of silane and laughing gas to generate SiO 2 The thin film is one silicon atom and two oxygen atoms, and the high silane will lead to the growth of Si0. The flow ratio of silane to laughing gas can only...

Embodiment 2

[0029] A kind of preparation SiO proposed in this embodiment 2 Thin film method, using PECVD deposition method to prepare SiO 2 film:

[0030] High frequency and low frequency are alternately deposited, in which the high frequency is 13.56MHz; the low frequency is 50KHz.

[0031] High frequency power is 100W, low frequency power is 100W.

[0032] The deposition gas pressure is 900mtorr, and the deposition gas is mixed gas and laughing gas, wherein the flow ratio of mixed gas and laughing gas is 300:600; the mixed gas includes silane and nitrogen, and the volume ratio of silane is 5% ; Deposition temperature is 270°C.

Embodiment 3

[0034] A kind of preparation SiO proposed in this embodiment 2 Thin film method, using PECVD deposition method to prepare SiO 2 film:

[0035] High frequency and low frequency are alternately deposited, in which the high frequency frequency is 13.56MHz; the low frequency frequency is 400KHz.

[0036] The high frequency power is 20W, and the low frequency power is 35W.

[0037] The deposition gas pressure is 1600mtorr, and the deposition gas is mixed gas and laughing gas, wherein the flow ratio of mixed gas and laughing gas is 200:750; the mixed gas includes silane and nitrogen, and the volume ratio of silane is 5% ; The deposition temperature is 300°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a SiO2 film, which adopts a PECVD (Plasma Enhanced Chemical Vapor Deposition) mode to prepare the SiO2 film: adopting a high-frequency and low-frequency alternating mode to deposit, wherein the high frequency is 13.56 KHz, the low frequency is 50 to 400 KHz, the high-frequency power is 20-100W, and the low-frequency power is 35-100W, the gas for deposition is amixed gas of amixed gas and laughing gas, the gas pressure is 900-1600 mtorr, and the flow ratio of the silane to the laughing gas is (90-300): (600-800), and the deposition temperature is 250-300 DEG C. The SiO2 thin film is grown alternately at high and low frequencies, so that the thin film is relatively high in compactness and high in moisture resistance; and the low-stress SiO2 film is obtained by adjusting process parameters of high and low frequencies, the stable low-stress SiO2 film can be obtained through alternate growth of the high and low frequencies, the process is stable, the operation can be repeated, and the stress value is kept stable and does not drift.

Description

technical field [0001] The invention relates to the technical field of chip production, in particular to a method for preparing SiO 2 Thin film methods, chips and devices. Background technique [0002] In recent years, in order to meet people's requirements for information transmission, optical communication networks have gradually developed towards high-speed, all-optical networks. Semiconductor photodetectors are important receiving devices in optical communication networks, and their performance affects the operation of the entire optical communication network. The main indicators for evaluating photodetectors are: responsivity, dark current, response wavelength range, reliability, etc. The reliability tests include high and low temperature shock, high temperature heat, high temperature aging, etc. [0003] The chip is an important part of the photodetector, and its quality determines the performance of the photodetector. [0004] Existing detector chips use silane (Si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/40C23C16/50C23C16/52H01L21/02
CPCC23C16/401C23C16/50C23C16/52H01L21/02164H01L21/02274
Inventor 万远涛廖世容况诗吟
Owner 浙江光特科技有限公司