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Trichlorosilane rectification process

A technology of trichlorosilane and process, which is applied in the field of rectification of trichlorosilane, can solve the problems of increasing the energy consumption of a rectifying tower due to the feed temperature, and achieve the advantages of reducing steam consumption, increasing the feed temperature and saving electric energy. Effect

Pending Publication Date: 2022-02-08
XINJIANG DAQO NEW ENERGY
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Problems solved by technology

If the feed temperature is too low, the energy consumption of the rectification column will be increased

Method used

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  • Trichlorosilane rectification process
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  • Trichlorosilane rectification process

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Embodiment 1

[0029] The reaction furnace outlet was discharged from the liquid mixture obtained by cold-bonded separation, and the liquid mixture of silicon tetrachloride was required, and it is necessary to pass through a rectification column (referred to as a cold hydrogenated coarse tower) to combine trichloride and tetrachloride. Departure. The impurity content in the isolated trichloride is too high as the requirements of the production of polysilicon, and is required to be sent to the rectification system for multi-stage rectification purification. Due to the multifestine silicon in the top of the coarse column, the cooling medium of air cooling, water cooling or even lower temperature is cooled, and the temperature of the top elimination of trichloride is between 20-50 ° C, and the rectification system first-stage tower The material plate temperature is more than 70-90 ° C, and the feed temperature is obviously low.

[0030] The use of a partial material having a cold hydrogenation furn...

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Abstract

The invention relates to a trichlorosilane rectification process. The rectification process comprises the following steps: carrying out heat exchange on a material 1 entering a cold hydrogenation coarse separation tower and a cooled tower top liquid-phase extracted material 2 of the cold hydrogenation coarse separation tower, and then entering the cold hydrogenation coarse separation tower, wherein the material 1 is a material with the outlet temperature of 80-150 DEG C of a cold hydrogenation furnace, and contains silicon trichloride and silicon tetrachloride. According to the trichlorosilane rectification process, the material at the temperature of 80-150 DEG C at the outlet of the cold hydrogenation reaction furnace is used for heating the produced trichlorosilane, the feeding temperature of the primary tower of the rectification system is increased, and the heated trichlorosilane directly enters the primary tower of the rectification system without passing through a buffer tank and a delivery pump, so that the energy consumption of the rectification process can be remarkably reduced.

Description

Technical field [0001] The present invention belongs to the technical field of polysilicon production, and more particularly to a distillation process of trichloromerane. Background technique [0002] Production of polysilicon raw material trichlorosilaba mainly depends on the cold hydrogenation system, the core reaction of the system is silicon tetrachloride and metal silicon, hydrogen, and reacts in a gas-solid fluidized bed reactive furnace to form trichloride. The reaction furnace reaction temperature is as high as 500-600 ° C, while hydrogen, silicon tetrachloride reaction is incomplete, after leaving the reaction furnace in the form of a high temperature gas phase mixture, it is necessary to pass multi-stage condensate separation to obtain trichloride and tetrachloride The liquid mixture of the silicon is separated from the chloride silicon with tetrachloride to silicon. The impurity content in the isolated trichloride is too high as the requirements of the production of po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107B01D3/14
CPCC01B33/10778B01D3/143
Inventor 刘华鹏樊晶
Owner XINJIANG DAQO NEW ENERGY
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