Sti cleaning process suitable for novel storage structure

Abstract

The invention discloses a Sti cleaning process suitable for a novel storage structure, and relates to the technical field of semiconductor manufacturing, and the Sti cleaning process comprises the operation steps of chemical liquid cleaning, ultrapure water cleaning, drying and surface covering treatment, supercritical fluid implantation, isopropanol discharge, supercritical fluid discharge, supercritical fluid recovery and the like. Thus, the surface of a wafer can be cleaned and dried, silicon oxide on the surface of the wafer can be taken out, and the phenomenon of tension drawing graphical collapse of water molecules and isopropanol molecules on the surface of the wafer is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an STI cleaning process suitable for a novel memory structure. Background technique [0002] The continuous advancement of wafer manufacturing technology involves the patterned structure of related nanoscale microstructures such as logic integrated circuits, storage, and micro-electromechanical systems. The size of the gate structure is continuously reduced, and the process node has changed from the popular 28nm Advance to below 5nm, on the relevant electronic channel structure on the semiconductor wafer, particles or other related pollutant residues will affect the production process, but in the various cleaning, etching, deglue, film removal, electroplating of the wafer , grinding or various wet processes will face the issue of removal of particles and pollutants. [0003] Sti is the abbreviation of English shallow trench isolation, and the Chinese translat...

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Problems solved by technology

The traditional Sti cleaning process mainly includes steps such as trench etching, oxide filling, and oxide planarization, while the traditional Sti process needs to be treated with a wet process to ensure the quality of the patterned corrected pattern, but it is becoming more and more In the process of nanoscale limit, after the relevant process cleaning and etching, the initial drying process such as isopropanol or nitrogen is used to remove the water molecules in the post-cleaning process, due to the tension between water molecules and isopropanol molecules The control problem will cause the phenomenon of tension drawing and graphical collapse

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