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Passivation contact cell and preparation method thereof, and passivation contact structure preparation method and device

A contact structure and battery technology, applied in the field of solar cells, can solve the problems of longer heating time, cooling waiting time, inconsistent process temperature, and increased winding plating steps, so as to reduce post-cleaning steps, no winding plating, and improve electrical performance. Effect

Pending Publication Date: 2022-02-22
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] 1. Three sets of equipment are required to complete the above three processes separately; although thermal oxidation growth of oxide layer and CVD deposition of amorphous silicon layer can be realized in the same tube furnace, but due to the inconsistent process temperature, it takes longer to heat up, Waiting time for cooling down, resulting in low production capacity;
[0005] 2. In the third step of doping, if the method of ion implantation is used, the machine is relatively expensive; if the method of phosphorus diffusion is used, a mask is required to achieve single-sided doping, and the process is more complicated;
[0006] 3. The process temperature of thermal oxidation and CVD is above 550°C. High temperature will cause large curvature of the film and affect the product yield. At the same time, the reaction gas will spread to the back of the substrate, react and deposit a film, forming a winding plating , it is necessary to increase the dewinding plating step and increase the cost

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  • Passivation contact cell and preparation method thereof, and passivation contact structure preparation method and device
  • Passivation contact cell and preparation method thereof, and passivation contact structure preparation method and device
  • Passivation contact cell and preparation method thereof, and passivation contact structure preparation method and device

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preparation example Construction

[0062] The invention provides a method for preparing a passivated contact structure, comprising the following steps:

[0063] S1. First place the substrate in a PECVD process chamber to deposit a tunneling oxide layer, and then place it in a PVD process chamber to deposit a doped amorphous silicon layer; the PECVD process chamber is provided with a first gas, and the PVD process chamber A second gas and a target are arranged inside;

[0064] The target material includes at least one target material containing a dopant source, and the second gas does not contain a dopant source gas; or,

[0065] The target material includes at least one target material containing a dopant source, and the second gas includes a dopant source gas; or,

[0066] The target material does not contain a target material containing a dopant source, and the second gas contains a dopant source gas;

[0067] The doped amorphous silicon layer includes an n-layer thin film, n≥2, and the n-layer thin film in...

Embodiment 1

[0105] This embodiment describes in detail the preparation method of the passivation contact structure.

[0106] Step S0 , select an N-type substrate 1 and perform pretreatment on the substrate to form a textured structure on the surface of the substrate. The resistivity of the n-type crystalline silicon substrate is 0.3-5 Ω·cm, and the thickness is 80-200 μm.

[0107] Step S1, put the substrate 1 pretreated in step S0 into the loading chamber for loading, and enter the PECVD process chamber. In the PECVD process chamber, a tunneling oxide layer 2 is generated by plasma excitation. The gas introduced into the PECVD process chamber is Oxygen; after the deposition of the tunneling oxide layer 2 is completed in the PECVD process chamber, the substrate enters the PVD process chamber. The PVD process chamber includes two independent chambers. The process chamber is filled with argon gas. Silicon pillar target material, the second chamber is equipped with a target material containin...

Embodiment 2

[0110] This embodiment describes in detail the preparation method of the passivation contact structure.

[0111] Step S0, select the P-type substrate 1, and pretreat the substrate to form a textured structure on the surface of the substrate. The resistivity of the n-type crystalline silicon substrate is 0.1-5Ω·cm, and the thickness is 80-200μm.

[0112] Step S1, put the substrate pretreated in step S0 into the loading chamber for loading, and enter the PECVD process chamber, and generate a tunneling oxide layer 2 through plasma excitation in the PECVD process chamber, the thickness of which is 0.5-3nm, and the PECVD process chamber The gas introduced into the interior is oxygen; after the deposition of the tunneling oxide layer 2 is completed in the PECVD process chamber, the substrate enters the PVD process chamber. The PVD process chamber includes two independent chambers, and argon gas is introduced into the process chamber. A pure silicon column target is set in the cavity...

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Abstract

The invention relates to a passivation contact cell and a preparation method thereof, and a passivation contact structure preparation method and device. The passivation contact structure preparation method comprises the following steps that: S1, a substrate is pretreated; S2, a tunneling oxide layer is deposited on the substrate in a PECVD (Plasma Enhanced Chemical Vapor Deposition) process cavity, and then a doped amorphous silicon layer is deposited in a PVD (Physical Vapor Deposition) process cavity; a first gas is arranged in the PECVD process cavity, and a second gas and a target material are arranged in the PVD process cavity; the target material comprises at least one target material containing a doping source, and the second gas does not comprise doping source gas; or, the target material comprises at least one target material containing a doping source, and the second gas comprises doping source gas; or, the target material does not contain a target material containing a doping source, and the second gas contains doping source gas; and the doped amorphous silicon layer comprises n layers of films, n is greater than or equal to 2, and the n layers of films at least comprise a doped layer and a non-doped layer; and S3, annealing treatment is carried out on the substrate to form a doped polycrystalline silicon layer, and the preparation of a passivation contact structure is completed. According to the invention, the preparation of the tunneling oxide layer and the doped polycrystalline silicon layer is continuously completed in the same equipment, and the preparation process is simplified.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a passivation contact cell and its preparation method, and a passivation contact structure preparation method and device. Background technique [0002] Due to the continuous decrease in the thickness of the substrate of crystalline silicon cells, and for cells of a certain thickness, when the diffusion length of minority carriers is greater than the thickness of the substrate, the recombination rate of the surface has a particularly significant impact on the efficiency of solar cells. Therefore, most of the current technologies are to passivate the surface of crystalline silicon. At present, the mainstream passivation technology is to deposit silicon nitride passivation film on the front and back of the battery to improve the recombination problem. A more advanced technology is the use of tunneling oxide layer passivation contact technology (TOPCon); passivation tunneling te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/67H01L31/0216H01L31/0288H01L31/0368H01L31/068C23C14/18C23C16/40
CPCH01L31/1804H01L31/1868H01L31/1876H01L31/02167H01L31/0288H01L31/03682H01L31/02168H01L31/068H01L21/67173H01L21/67207C23C16/40C23C14/18H01L31/0368Y02E10/546Y02E10/547Y02P70/50C23C14/024C23C14/568C23C14/185C23C14/5806H01L31/0745H01L31/18
Inventor 杜哲仁陆俊宇季根华马丽敏陈嘉林建伟
Owner TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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