A semiconductor structure with low internal loss, low resistance and high efficiency and its preparation method

Abstract

The invention provides a semiconductor structure with low internal loss, low resistance and high efficiency and its preparation method, comprising: a semiconductor substrate layer; a first confinement layer located on the semiconductor substrate layer; a confinement layer located on the first confinement layer away from the semiconductor substrate The first waveguide layer on the side of the bottom layer; the active layer on the side of the first waveguide layer away from the first confinement layer; the second waveguide layer on the side of the active layer away from the first waveguide layer ; The second confinement layer located on the side away from the active layer of the second waveguide layer; the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer, and the second confinement layer have a characteristic optical field , in the epitaxial thickness direction, the doping concentration of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer decreases as the intensity of the characteristic light field increases. The luminous efficiency of the semiconductor structure with low internal loss, low resistance and high efficiency is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure with low internal loss, low resistance and high efficiency and a preparation method thereof. Background technique [0002] A light-emitting semiconductor device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, light-emitting semiconductor devices are widely used. [0003] Howe...

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Problems solved by technology

[0003] However, the luminous efficiency of current light-emitting semiconductor devices still needs to be improved

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