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Preparation method of large-size two-dimensional layered metal thiophosphate crystal

A metal thiophosphate, two-dimensional layered technology, applied in crystal growth, chemical instruments and methods, self-solids, etc., to achieve the effect of simple operation

Active Publication Date: 2022-02-25
EAST CHINA JIAOTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, about two-dimensional layered metal indium thiophosphate (In 2 P 3 S 9 ) There are few related reports, and the large-scale two-dimensional layered metal indium thiophosphate (In 2 P 3 S 9 ) has not yet been reported

Method used

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  • Preparation method of large-size two-dimensional layered metal thiophosphate crystal
  • Preparation method of large-size two-dimensional layered metal thiophosphate crystal
  • Preparation method of large-size two-dimensional layered metal thiophosphate crystal

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preparation example Construction

[0028] A method for preparing large-scale two-dimensional layered metal thiophosphate crystals, comprising the following steps:

[0029] S1. Weigh indium spheres, phosphorus lumps and sulfur granules according to the stated amount and ratio, and use them as raw materials after mixing. Elemental iodine is used as a transport agent, and potassium iodide is used as a molten salt. The mass ratio of indium spheres, phosphorus blocks and sulfur granules is 2:3:9. According to the volume of the reaction vessel, the amount of elemental iodine added is 1-3 mg / mL; that is, 1-3 mg of elemental iodine needs to be added per milliliter of reaction vessel.

[0030] S2. Put the raw materials, elemental iodine and potassium iodide into the reaction vessel together, vacuum seal it under a certain pressure, and then carry out high-temperature reaction. The pressure of the reaction vessel is less than 10 -4 mbar. Place the sealed reaction vessel horizontally in a tube furnace with two temperat...

Embodiment 1

[0033] 574 mg of indium spheres, 232.5 mg of red phosphorus lumps, 720 mg of sulfur pellets, 600 mg of potassium iodide and 30 mg of iodine were vacuum sealed together in a quartz tube. The pressure in the quartz tube is less than 10 -4 mbar. React in a tube furnace with dual temperature zones for 3 days, the temperature in the high temperature zone is 700°C, and the temperature in the low temperature zone is 650°C. After the reaction is completed, wait until it drops to room temperature, wash with acetone to remove residual iodine, and wash with ultrapure water to remove potassium iodide , to obtain centimeter-sized single crystals. Such as figure 1 As shown, the size of the single crystal reaches the order of centimeters, and the crystal is yellow. Such as figure 2 As shown, the X-ray diffraction pattern shows that the obtained crystal is metal indium thiophosphate. Such as image 3 As shown, the scanning electron micrograph of the crystal shows that the obtained sing...

Embodiment 2

[0035] 574 mg of indium spheres, 232.5 mg of red phosphorus lumps, 720 mg of sulfur pellets, 600 mg of potassium iodide and 30 mg of iodine were vacuum sealed together in a quartz tube. The pressure in the quartz tube is less than 10 -4 mbar. React in a tube furnace with dual temperature zones for 3 days, the temperature in the high temperature zone is 650°C, and the temperature in the low temperature zone is 600°C. After the reaction is completed, wait until it drops to room temperature, wash with acetone to remove residual iodine, and wash with ultrapure water to remove potassium iodide , to obtain a centimeter-sized metal indium thiophosphate single crystal. Such as Figure 4 As shown, the size of the single crystal reaches the order of centimeters, and the crystal is yellow.

[0036] The metal indium thiophosphate single crystal prepared by the method described in Example 1 or Example 2 is placed on the 3M adhesive tape, and the obtained metal indium thiophosphate singl...

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Abstract

The invention discloses a preparation method of a large-size two-dimensional layered metal thiophosphate crystal, and belongs to the technical field of metal thiophosphate. The preparation method comprises the following steps: S1, weighing the indium balls, the phosphorus blocks and the sulfur particles according to the amount and proportion, mixing the indium balls, the phosphorus blocks and the sulfur particles to serve as raw materials, taking elemental iodine as a transport agent, and taking potassium iodide as molten salt; s2, adding the raw materials, elemental iodine and potassium iodide into a reaction container together, performing vacuum sealing under a certain pressure, and then performing a high-temperature reaction; and S3, taking out the reacted product, and washing to remove residual iodine and potassium iodide to obtain the large-size two-dimensional layered metal thiophosphate crystal. By adopting the preparation method of the large-size two-dimensional layered metal thiophosphate crystal, the large-size layered metal indium thiophosphate crystal can be prepared, and the method is simple and efficient.

Description

technical field [0001] The invention relates to the technical field of metal thiophosphates, in particular to a method for preparing large-size two-dimensional layered metal thiophosphate crystals. Background technique [0002] Since the discovery of graphene in 2004, the research on two-dimensional materials has developed rapidly, and many new two-dimensional materials have sprung up like mushrooms after rain. The discovered family of two-dimensional materials has covered the fields of insulators, semiconductors, conductors, and superconductors. The special structure and quantum confinement effect of two-dimensional materials endow them with excellent physical and chemical properties that many macroscopic bulk materials do not have, such as high electron mobility, broadband absorption, ultrafast response, electrical tunability, large specific surface area, and heterogeneous integration compatibility. It has broad application prospects in the fields of electronic devices, o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/10C30B29/46C30B29/64
CPCC30B1/10C30B29/46C30B29/64C30B29/14C30B9/12C30B25/00C30B9/00
Inventor 程自强石海泉罗昕柳剑鹏王洵黄克林
Owner EAST CHINA JIAOTONG UNIVERSITY