Cleaning process of winding plating polycrystalline silicon

Abstract

The invention discloses a cleaning process of wound-plated polycrystalline silicon, which comprises the following steps of: obtaining a silicon wafer with wound-plated polycrystalline silicon, cleaning the front surface and the edge of the silicon wafer by adopting a hydrofluoric acid solution, and controlling the flow of a water film to be 5mL / wafer-40mL / wafer, so that the thinning amount of a front surface BSG layer is 20nm-60nm, and the retaining thickness of the BSG layer is more than 40nm; and removing the polycrystalline silicon plated on the front surface and the edge of the silicon wafer under the protection of the BSG layer and the PSG layer on the front surface and the back surface of the silicon wafer, and removing the BSG layer on the front surface and the PSG layer on the back surface of the silicon wafer. According to the cleaning process, the problems of low battery conversion efficiency and low yield caused by polycrystalline silicon winding plating can be effectively solved, the capacity of an LPCVD machine can be released, the use value is high, the application prospect is good, and the cleaning process has important significance in reducing the production cost of the TOPCon battery, improving the capacity of the TOPCon battery and improving the conversion efficiency and the yield of the TOPCon battery.

Description

technical field [0001] The invention belongs to the technical field of TOPCon battery preparation, and relates to a cleaning process for wrapping and plating polysilicon, in particular to a cleaning process suitable for wrapping and plating polysilicon for TOPCon batteries. Background technique [0002] Tunneling oxidation passivation contact solar cells (TOPCon cells) have the advantages of high theoretical efficiency, high compatibility with PERC production lines, rich and cheap production materials, and relatively low equipment investment compared with HJT cells. It is expected to take over from PERC cells and become the mainstream of the next generation N-type crystalline silicon cell technology. Due to the excellent passivation performance of poly (polysilicon) produced by LPCVD technology, the LPCVD technology route has become the first mature technology route for TOPCon batteries. Although the passivation effect of the poly layer prepared by LPCVD is good, the cleani...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, and to provide a polysilicon wrapping polysilicon that can effectively solve the problems of low battery conversion efficiency and yield rate caused by polysilicon wrapping plating, and release the capacity of LPCVD machines. cleaning process

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