Multistage groove Schottky diode and manufacturing method thereof

Abstract

The invention discloses a multi-stage groove Schottky diode and a manufacturing method thereof, and the Schottky diode comprises an epitaxial wafer which comprises a semiconductor substrate and an epitaxial layer located on the surface of the semiconductor substrate; the deep groove is formed in one side, away from the semiconductor substrate, of the epitaxial layer and comprises a plurality of sub-grooves which are sequentially arranged in the first direction; the first direction is the direction in which the opening of the deep groove points to the bottom; in two adjacent sub-grooves, the width of the sub-groove close to the bottom of the deep groove is smaller than that of the sub-groove far away from the bottom of the deep groove; doped layers are arranged on the side walls and the bottoms of the deep trenches; an electric field buffer region surrounding the deep trench opening is arranged in the surface of one side, deviating from the semiconductor substrate, of the epitaxial layer and is in contact with the doping layer; the cathode is positioned on one side, away from the epitaxial layer, of the semiconductor substrate; the filling structure and the anode are located in the deep trench, and the filling structure is located between the anode and the bottom of the deep trench; and the doping layer and the electric field buffer region are both inversely doped with the epitaxial layer.

Description

technical field [0001] The present application relates to the technical field of Schottky diodes, and more specifically, to a multi-level trench Schottky diode and a manufacturing method thereof. Background technique [0002] With the continuous development of science and technology, more and more electronic devices are widely used in people's daily life and work, which brings great convenience to people's daily life and work, and has become an indispensable and important tool for people today. tool. [0003] The main structure of electronic equipment to realize various functions is integrated circuit, and Schottky diode is an important electronic component of integrated circuit. SiC is a wide bandgap semiconductor material that has developed rapidly in the past ten years. Compared with other semiconductor materials such as Si, GaN and GaAs, SiC material has wide bandgap, high thermal conductivity, high carrier saturation mobility, high power density and other advantages. ...

AI Technical Summary

Problems solved by technology

However, due to the large depth of the deep trench, the thickness of the doped layer in the deep trench is uneven, which affects the performance of the device.

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