Additive for removing winding plating of topcon battery and application of additive

An additive and wrap-around plating technology, which is applied in the field of solar cells, can solve problems such as polysilicon layer corrosion, and achieve the effect of inhibiting corrosion

Pending Publication Date: 2022-03-04
西安蓝桥新能源科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of dewinding and plating, if no protective measures are taken, the pyramid textur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Additive for removing winding plating of topcon battery and application of additive
  • Additive for removing winding plating of topcon battery and application of additive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: 0.1% of 3,4-epoxycyclohexylmethyltrimethoxysilane, N-(2-aminoethyl)- 0.05% of 3-aminopropyltrimethoxysilane, 0.5% of dodecyltrimethylammonium bromide, 0.01% of polyethylene oxide and the rest of deionized water; wherein, the resistivity of the deionized water is greater than 15MΩ.

[0026] The additive is used to remove the topcon battery winding plating, and the topography of the silicon wafer surface before winding plating is as follows figure 1 shown.

[0027] The method for dewinding plating comprises the following steps:

[0028] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 10v / v% and then etched. The etching time is 15s;

[0029] S2. Mix the additive with the alkaline solution, an...

Embodiment 2

[0031] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: hexadecyltrimethoxysilane 0.15%, dodecyltrimethylammonium bromide 0.5%, polyethylene oxide 0.01 % and the balance of deionized water; wherein, the resistivity of the deionized water is greater than 15MΩ.

[0032] The additive is used to remove the topcon battery winding plating, and the method of removing the winding plating includes the following steps:

[0033] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 10v / v% and then etched. The etching time is 15s;

[0034] S2. Mix the additive with the alkaline solution, and remove the silicon wafers obtained in the alkaline etching step S1; the volume ratio of the additive to the alkaline solution is 0.5v / v%, and the alkali is NaOH with a concent...

Embodiment 3

[0036] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: 0.25% phenyltrimethoxysilane, 1% octyltrimethylammonium bromide, hexadecyltrimethylbromide Ammonium chloride 0.5%, polyethylene oxide 0.1%, and the rest deionized water.

[0037] Wherein, the resistivity of the deionized water is greater than 15MΩ.

[0038] The application of the additive in removing topcon battery winding plating, the method of removing winding plating comprises the following steps:

[0039] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 20v / v% and then etched. The etching time is 10s;

[0040] S2. Mix the additive with the alkali solution, and remove the silicon wafer obtained in the alkali etching step S1; the volume ratio of the additive to the alkali solution is 1.5v / ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of solar cells. The invention relates to an additive for removing winding plating of a topcon battery. The additive is prepared from the following components in percentage by mass: 0.1 to 0.5 percent of silane coupling agent, 0.5 to 2 percent of alkyl trimethyl ammonium bromide, 0.01 to 0.1 percent of polyoxyethylene and the balance of deionized water. The additive disclosed by the invention can be adsorbed on the surfaces of borosilicate glass and phosphorosilicate glass growing on a silicon wafer, two silicon oxide films are protected from being corroded by alkali in the process of removing the winding plating, and meanwhile, the corrosion rate of the winding plating in an alkali solution can be improved, so that the winding plating is removed more quickly and thoroughly.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an additive for topcon cell dewinding plating and application thereof. Background technique [0002] Solar photovoltaic power generation is an important part of the future energy structure. Among many solar cells and solar cell routes, topcon cells are compatible with existing perc cell production lines because of their high power generation efficiency, low cost, low attenuation, and simple process flow. Good performance and easy to upgrade, it is considered to be one of the most promising solar energy efficient battery technologies in the future. In the production process of topcon battery, it is necessary to use LPCVD to grow polysilicon on one side of the silicon wafer. When the current polysilicon growth method is used to coat the target growth surface, polysilicon will inevitably be grown on the edge of the other side. We call it wrap-around plating. . If t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18C09K13/02C09K13/08
CPCH01L31/1804H01L31/186C09K13/02C09K13/08Y02E10/547
Inventor 张新鹏张鹏伟冯萍李侠殷政
Owner 西安蓝桥新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap