Additive for removing winding plating of topcon battery and application of additive
An additive and wrap-around plating technology, which is applied in the field of solar cells, can solve problems such as polysilicon layer corrosion, and achieve the effect of inhibiting corrosion
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Embodiment 1
[0025] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: 0.1% of 3,4-epoxycyclohexylmethyltrimethoxysilane, N-(2-aminoethyl)- 0.05% of 3-aminopropyltrimethoxysilane, 0.5% of dodecyltrimethylammonium bromide, 0.01% of polyethylene oxide and the rest of deionized water; wherein, the resistivity of the deionized water is greater than 15MΩ.
[0026] The additive is used to remove the topcon battery winding plating, and the topography of the silicon wafer surface before winding plating is as follows figure 1 shown.
[0027] The method for dewinding plating comprises the following steps:
[0028] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 10v / v% and then etched. The etching time is 15s;
[0029] S2. Mix the additive with the alkaline solution, an...
Embodiment 2
[0031] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: hexadecyltrimethoxysilane 0.15%, dodecyltrimethylammonium bromide 0.5%, polyethylene oxide 0.01 % and the balance of deionized water; wherein, the resistivity of the deionized water is greater than 15MΩ.
[0032] The additive is used to remove the topcon battery winding plating, and the method of removing the winding plating includes the following steps:
[0033] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 10v / v% and then etched. The etching time is 15s;
[0034] S2. Mix the additive with the alkaline solution, and remove the silicon wafers obtained in the alkaline etching step S1; the volume ratio of the additive to the alkaline solution is 0.5v / v%, and the alkali is NaOH with a concent...
Embodiment 3
[0036] An additive for topcon battery dewinding plating, including the following components calculated by mass percentage: 0.25% phenyltrimethoxysilane, 1% octyltrimethylammonium bromide, hexadecyltrimethylbromide Ammonium chloride 0.5%, polyethylene oxide 0.1%, and the rest deionized water.
[0037] Wherein, the resistivity of the deionized water is greater than 15MΩ.
[0038] The application of the additive in removing topcon battery winding plating, the method of removing winding plating comprises the following steps:
[0039] S1. The silicon wafer is etched with hydrofluoric acid to remove the phospho-silicate glass on the coating. The concentration of hydrofluoric acid is 45wt%. Hydrofluoric acid and water are mixed at a volume ratio of 20v / v% and then etched. The etching time is 10s;
[0040] S2. Mix the additive with the alkali solution, and remove the silicon wafer obtained in the alkali etching step S1; the volume ratio of the additive to the alkali solution is 1.5v / ...
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