Particle pressure junction type diode anode target for pulse power device and preparation method of particle pressure junction type diode anode target

Abstract

According to the particle pressure junction type diode anode target for the pulse power device and the preparation method, the limitation that the whole anode target needs to be replaced in each experiment is overcome, the experiment cost is further reduced, and the service life of the anode is prolonged. The anode target comprises a forming target formed by pressing and bonding one or more target material particles; the target material particles are made of tantalum, tantalum carbide, graphite, tungsten, tungsten carbide or aluminum, and the forming target selects different target material particles and placement combinations according to target ray parameters for pressing; the diameter of the target material particles is 0.05-1mm, and the gap between the target material particles is less than 100mu m; and the thickness of the formed target is at least 3-4 times of the diameter of the target material particles. The anode target is formed by pressing and rolling target material particles through a machine tool, the anode target has long service life, meanwhile, target material components can be flexibly adjusted according to diode output indexes, and the anode target has the capacity of adjusting the radiation quality of an output radiation field.

Description

technical field [0001] The invention belongs to the field of interaction between high-power high-current pulsed electron beams and substances, and in particular relates to a particle-compressed high-current diode anode target used for high-dose X-rays or gamma-rays generated by the interaction between high-power electron beams and substances. Background technique [0002] The full name of the high-current diode is the high-current pulsed electron beam diode. Its main function is to generate high-dose large-area x-rays or gamma rays through the interaction between the high-current electron beam emitted by the cathode and the high atomic number (hereinafter referred to as Z) anode target. In the anode area of ​​the diode, due to the high energy and high intensity of the electron beam (0.3-15MeV, 10kA-25MA), the electron beam bombarding the anode target will generate thermal deposition on the target, which will generate a very strong thermal shock wave and eruption on the target...

AI Technical Summary

Problems solved by technology

In the anode area of ​​the diode, due to the high energy and high intensity of the electron beam (0.3-15MeV, 10kA-25MA), the electron beam bombarding the anode target will generate thermal deposition on the target, which will generate a very strong thermal shock wave and eruption on the target. Impulse and other thermal-mechanical damage effects cause anode ablation, melting, deformation, and spallation, resulting in the need to remove the vacuum layer after each experiment and replace the anode target as a whole, resulting in low experimental efficiency and economic benefits

[0003] Most of the anode targets used in the high-current diodes of the existing pulse power devices are integrally processed single-layer or multi-layer tantalum targets. "Electron Beam Diode" and "Flash-I Electron Beam Diode" by Hu Kesong and other articles introduced the basic structure of accelerators such as "Chenguang", "Qiangguang No. 1" and "Flash No. 1". The diodes of the accelerator use a single-dielectric tantalum target processed as a whole, and the entire anode must be replaced after each experiment

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