Preparation method of high-speed photoelectric detector chip

Abstract

The invention provides a high-speed photoelectric detector chip, which comprises a substrate and an epitaxial layer grown on the substrate, and is characterized in that the epitaxial layer sequentially comprises an N-type InGaAs contact layer, an InP corrosion stop layer, an InGaAs absorption layer, an InGaAsP transition layer and an InGaAs contact layer from bottom to top. The invention also provides a preparation method of the high-speed photoelectric detector chip. According to the high-speed photoelectric detector chip and the preparation method thereof provided by the invention, by optimizing the epitaxial structure of the chip, the preparation cost of the chip can be reduced, and the process period can be shortened. Meanwhile, by changing the process route, the responsivity and reliability of the chip can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for preparing a high-speed photodetector chip. Background technique [0002] Since the 21st century, with the rapid development of technologies such as the Internet of Things, big data, and cloud computing, especially the arrival of the 5G era, the throughput of communication data has shown explosive growth. According to statistics, more than 70% of traffic exchange occurs in the computer room of the data center. As a transfer station for traffic exchange, the data center has an urgent demand for communication broadband. The rapid development of data centers has promoted the rapid upgrade of servers, DCN, and DCI service interfaces, enabling them to quickly upgrade from the current 10GE / 40GE to 50GE / 200GE / 400GE, so that the 50G PAM4 industry chain supports the rapid development of data centers. [0003] The performance of the transmitter and receiver on th...

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Problems solved by technology

However, the AuSn alloying process is unstable, the consistency is poor, and the process cost is high, which adversely affects the actual production

Moreover, in the actual process, since the corrosion of the N stage needs to be etched to more than 3 μm, a double-layer adhesive needs to be applied in the subsequent process of opening the P electrode window. Since the P window is small, the P window is prone to serious deformation after photolithography, resulting in If the window is too large and the photosensitive surface is reduced, it is easy to cause a decrease in responsivity and difficulty in coupling

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