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Preparation method of photoelectric detector based on zinc oxide-cuprous phosphide

A technology of photodetectors and cuprous phosphide, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor photoelectric effect, achieve low cost, high repeatability of device performance, and simple preparation

Pending Publication Date: 2022-04-05
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A device that realizes light detection by using a single zinc oxide or cuprous phosphide due to the change of light resistance, due to the influence of the material's own electrical properties and gas surface adsorption, the photoelectric effect is poor

Method used

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  • Preparation method of photoelectric detector based on zinc oxide-cuprous phosphide

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A kind of preparation method based on zinc oxide-cuprous phosphide photodetector

[0018] Step (1). Sodium hypophosphite is put into the corundum boat, and then the surface of the corundum boat is covered with 1 square centimeter of copper foil with a thickness of 250 microns;

[0019] Step (2). Put the corundum boat in step (1) into the corundum tube. After vacuuming, fill it with argon gas of 1 atmosphere, and then seal the two ends of the corundum tube;

[0020] Step (3). Heat the corundum tube in step (2) to 280°C through a tube furnace at a heating rate of 10°C / min; keep warm after the temperature rises to 280°C for 30 minutes; then cool naturally to room temperature, pump the corundum tube Remove the residual gas in the tube by vacuum, and then take out the copper foil with cuprous phosphide grown on the surface of the product;

[0021] Step (4). Using the product of step (3) as a substrate, deposit an aluminum-doped zinc oxide film by magnetron sputtering; magne...

Embodiment 2

[0024] A kind of preparation method based on zinc oxide-cuprous phosphide photodetector

[0025] Step (1). Sodium hypophosphite is put into the corundum boat, and then the surface of the corundum boat is covered with 3 square centimeters of copper foil with a thickness of 500 microns;

[0026] Step (2). Put the corundum boat in step (1) into the corundum tube. After vacuuming, fill it with argon gas of 1 atmosphere, and then seal the two ends of the corundum tube;

[0027] Step (3). Heat the corundum tube in step (2) to 290°C through a tube furnace at a heating rate of 10°C / min; keep warm after the temperature rises to 290°C for 40 minutes; then cool naturally to room temperature, pump the corundum tube Remove the residual gas in the tube by vacuum, and then take out the copper foil with cuprous phosphide grown on the surface of the product;

[0028] Step (4). Using the product of step (3) as a substrate, deposit an aluminum-doped zinc oxide film by magnetron sputtering; magn...

Embodiment 3

[0031] A kind of preparation method based on zinc oxide-cuprous phosphide photodetector

[0032] Step (1). Sodium hypophosphite is put into the corundum boat, and then the surface of the corundum boat is covered with 5 square centimeters of copper foil with a thickness of 1000 microns;

[0033] Step (2). Put the corundum boat in step (1) into the corundum tube. After vacuuming, fill it with argon gas of 1 atmosphere, and then seal the two ends of the corundum tube;

[0034] Step (3). Heat the corundum tube in step (2) to 300°C through a tube furnace at a heating rate of 10°C / min; keep warm after the temperature rises to 300°C for 60 minutes; then cool naturally to room temperature, pump the corundum tube Remove the residual gas in the tube by vacuum, and then take out the copper foil with cuprous phosphide grown on the surface of the product;

[0035] Step (4). Using the product of step (3) as a substrate, deposit an aluminum-doped zinc oxide film by magnetron sputtering; mag...

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Abstract

The invention discloses a preparation method of a photoelectric detector based on zinc oxide-cuprous phosphide, and the method comprises the steps: firstly, growing cuprous phosphide on the surface of a copper foil, and then depositing an aluminum-doped n-type zinc oxide film on the surface of the cuprous phosphide; and finally depositing an aluminum electrode on the zinc oxide surface to obtain the device. According to the photoelectric device formed by depositing cuprous phosphide and zinc oxide on the surface of the copper foil, the manufacturing method is simple, the device performance repeatability is high, raw materials needed for preparing the device are rich, preparation is easy, the cost is low, and the visible light detection performance is good.

Description

technical field [0001] The invention belongs to the technical field of materials and devices, and in particular relates to a preparation method of a photodetector device. Background technique [0002] Zinc oxide is an n-type transparent conductive film material, and cuprous phosphide is a p-type semiconductor material, both of which have photoconductive response and can be used to prepare photodetection devices. A device that uses a single zinc oxide or cuprous phosphide to realize photodetection due to changes in light resistance, has a poor photoelectric effect due to the material's own electrical properties and the influence of gas surface adsorption. In this patent, the two are combined to prepare a device with a pn junction structure, and the photoelectric detection performance is improved. In device preparation, in order to obtain devices with better performance, this patent uses aluminum-doped zinc oxide instead of zinc oxide intrinsic semiconductor material. The pr...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0224H01L31/0336H01L31/18
CPCY02P70/50
Inventor 彭雪郭欣蔡庆锋陈蔓汝吕燕飞席俊华赵士超
Owner HANGZHOU DIANZI UNIV
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