Gold etching liquid

Abstract

The invention relates to a gold etching solution. The etching liquid is composed of an oxidizing agent, a complexing agent, a solubilizer, a pH buffering agent, an additive, an oxidizing agent regenerant and deionized water. The oxidizing agent is I2, the complexing agent is KI, the solubilizer is a polar organic solvent, the PH buffer agent is polybasic acid salt, the additive is an aromatic nitro compound containing a hydrophilic group, and the oxidizing agent regenerant is a pyrrolidone compound. The copper pyrrolidine compound and I <-> in the solution are subjected to a redox reaction, I <-> is oxidized into I2, consumed I2 is supplemented, and I2 and I <-> in the liquid medicine are in dynamic balance, so that the service life of the etching liquid is prolonged. Therefore, the gold etching solution disclosed by the invention can maintain stable etching rate and service life, and can etch a uniform gold surface at the same time.

Description

technical field [0001] The invention belongs to the intersection field of metal wet etching and semiconductor packaging and testing technology, and in particular relates to a precious metal gold etching solution. Background technique [0002] In MEMS and power device chip manufacturing and packaging and testing technologies, electrode characteristics are an important factor affecting device performance, and they need to have good conductivity and stability as well as low electrical mobility. Due to its extremely high ductility, gold electrode material can be thinned and thinned, and it has chemical stability unmatched by other metals, as well as good electromigration properties, so it is used in today's reduced-size chips and high-end chips in the packaging process. [0003] In the development of wafer-level chip packaging technology, the wiring line width needs to be gradually reduced. The gold etchant used in the existing etching process usually leads to too fast, too slo...

AI Technical Summary

Problems solved by technology

[0003] In the development of wafer-level chip packaging technology, the wiring line width needs to be gradually reduced. The gold etchant used in the existing etching process usually leads to too fast, too slow or unstable etching rate, and uneven etching surface As a result, the conductivity of the line is not good, the stability is not high, and it is easy to short circuit, break, etc.

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