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High-reliability low-contact resistance type GaN-based device and manufacturing method thereof

A technology with low contact resistance and reliability, applied in the field of microelectronics, can solve problems affecting device reliability and size reduction, and achieve the effects of improving device reliability, reducing edge burrs, and having good repeatability

Pending Publication Date: 2022-04-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But this method has a disadvantage, chemical mechanical polishing can only remove SiO 2 n covered by the upper surface + material, the SiO 2 sidewall covered n + material is still not removed, in SiO 2 After removal, rough burrs will be left on the edge of the source and drain regrown regions, which will significantly affect the reliability of the device and limit the further reduction of the device size

Method used

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  • High-reliability low-contact resistance type GaN-based device and manufacturing method thereof
  • High-reliability low-contact resistance type GaN-based device and manufacturing method thereof
  • High-reliability low-contact resistance type GaN-based device and manufacturing method thereof

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Embodiment 1

[0063] See figure 1 , figure 2 and Figure 3a-Figure 3i , figure 1 A schematic flow chart of a method for manufacturing a GaN-based HEMT device with high reliability and low contact resistance provided by an embodiment of the present invention, figure 2 A schematic structural diagram of a GaN-based HEMT device with high reliability and low contact resistance provided by an embodiment of the present invention, Figure 3a-Figure 3i It is a process schematic diagram of a method for preparing a low-resistance ohmic contact provided by an embodiment of the present invention. The invention provides a method for preparing a GaN-based HEMT device with high reliability and low contact resistance. The preparation method includes the following steps:

[0064] Step 1. Select the substrate layer 1.

[0065] Preferably, the material of the substrate layer 1 is SiC.

[0066] Step 2, see Figure 3a On the substrate layer 1, a nucleation layer 2, a buffer layer 3, a GaN channel layer ...

Embodiment 2

[0136] This embodiment provides a method for preparing a low contact resistance GaN-based device on the basis of the above-mentioned embodiments. The preparation method utilizes Al on the SiC substrate layer 1 2 o 3 / SiO 2 As an ohmic regrowth mask, a highly doped n + -GaN epitaxy to prepare low contact resistance GaN-based HEMT devices. The preparation method comprises the following steps:

[0137] Step 1. On the SiC substrate layer 1, use the MOCVD process to sequentially grow AlN nucleation layer 2, GaN buffer layer 3, GaN channel layer 4, AlN insertion layer 5, InAlN barrier layer 7, and GaN cap layer 8.

[0138] Step 2. Deposit SiO on the GaN cap layer 8 by PECVD 2 mask layer.

[0139] Specifically, using PECVD to deposit SiO on the sample 2 mask layer, using SiH 4 and N 2 O as a precursor to deposit SiO 2 , deposited with a thickness of 200nm, as the underlying regrowth mask layer.

[0140] Step 3, on SiO 2 Deposit Al on the mask layer by PEALD 2 o 3 mask la...

Embodiment 3

[0205] This embodiment provides a method for manufacturing a low contact resistance GaN-based device on the basis of the above embodiments. The method uses SiN / SiO on the SiC substrate layer 1 2 As an ohmic regrowth mask, highly doped n + -InGaN epitaxy to prepare low contact resistance GaN-based HEMT devices. The preparation method comprises the following steps:

[0206] Step 1. On the SiC substrate layer 1, use the MOCVD process to sequentially grow AlN nucleation layer 2, GaN buffer layer 3, GaN channel layer 4, AlN insertion layer 5, InAlN barrier layer 7, and GaN cap layer 8.

[0207] Step 2. Deposit SiO on the GaN cap layer 8 by PECVD 2 mask layer.

[0208] Specifically, using PECVD to deposit SiO on the sample 2 mask layer, using SiH 4 and N 2 O as a precursor to deposit SiO 2 , deposited with a thickness of 300nm as the underlying regrowth mask layer.

[0209] Step 3, on SiO 2 A SiN mask layer is deposited on the mask layer by PEALD.

[0210] Specifically, us...

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Abstract

The invention provides a high-reliability low-contact resistance type GaN-based HEMT device and a manufacturing method thereof. The method comprises the following steps: depositing a silicon oxide mask on an epitaxial substrate comprising a substrate layer, a nucleating layer, a buffer layer, a channel region, an insertion layer, a barrier layer and a GaN cap layer; depositing an aluminum oxide mask on the silicon oxide mask; photoetching a source and drain electrode region on the surface of the aluminum oxide, and etching a groove extending downwards to a channel region; manufacturing an undercut structure on the edge of the aluminum oxide / silicon oxide mask by using a wet process; growing a heavily doped n + material in the groove; removing the mask and the polycrystalline material on the mask by wet etching; preparing a source-drain metal electrode; depositing a passivation layer and preparing a through hole and a groove in the passivation layer; preparing a gate electrode on the groove; and performing metal interconnection. According to the invention, the edge morphology of the ohm regrowth region can be obviously improved, and the reliability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a GaN-based device with high reliability and low contact resistance and a manufacturing method thereof. Background technique [0002] Due to its excellent material properties, such as high mobility, high breakdown electric field, and high electron saturation rate, GaN has shown great application potential in the field of millimeter wave and terahertz amplifiers. Since GaN-based HEMTs devices were first reported, materials and device processes have been continuously matured. In order to achieve higher operating frequency and efficiency, the source-drain spacing of GaN-based millimeter-wave devices has been continuously reduced. The parasitic resistance of the device, especially the ohm The influence of contact resistance is also becoming more and more obvious. The high-temperature alloying ohmic contact method gradually cannot meet the development needs of GaN-based millim...

Claims

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Application Information

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IPC IPC(8): H01L21/335H01L21/033H01L29/778
CPCH01L29/66462H01L21/0332H01L21/0337H01L21/0338H01L29/7787
Inventor 祝杰杰马晓华郭静姝赵旭徐佳豪
Owner XIDIAN UNIV
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