Method for manufacturing LED chip without etching and LED chip

Abstract

The invention relates to the technical field of LED manufacturing, in particular to an etching-free LED chip manufacturing method and an LED chip, innovatively provides a positioning means of an N-type semiconductor layer, an N electrode is manufactured on the side face of a positioning position, the etching process step in the conventional LED chip manufacturing process is omitted, the operation process is simplified, the working efficiency is improved, and the manufacturing cost is reduced. The method comprises the following operation steps: S1, sequentially growing epitaxial layer structures of an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on the front surface of a substrate; s2, manufacturing a P electrode above the P-type semiconductor layer; s3, determining the thickness of the N-type semiconductor layer as X, the thickness from the bottom of the N-type semiconductor layer to the top of the P-type semiconductor layer as Y and the total thickness of the light-emitting layer and the P-type semiconductor layer as Z according to the epitaxial layer structure grown in the step S1, and setting the position of the N electrode in a range of Y-Z-Y from the top of the P-type semiconductor layer; and S4, manufacturing the N electrode on the side surface in the position range of the N electrode determined in the step S3.

Description

technical field [0001] The invention relates to the technical field of LED production, in particular to a method for producing an LED chip without etching and the LED chip. Background technique [0002] Under the existing technical conditions, the electrodes of conventional front-mounted and flip-chip LEDs are etched from the P-type semiconductor layer to the N-type semiconductor layer, and then metal-plated to make N-type electrodes, such as figure 1 For the production of formal LEDs, the production of N-type electrodes requires first etching the epitaxial layer structure from the P-type semiconductor layer to the N-type semiconductor layer, and removing the edge of the above stacked structure until the edge of the N-type semiconductor layer is exposed. On the one hand, the etching process is relatively complicated and time-consuming. On the other hand, the epitaxial layer is damaged by etching, which causes a large loss of LED light. Contents of the invention [0003] I...

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Problems solved by technology

[0002] Under the existing technical conditions, the electrodes of conventional front-mounted and flip-chip LEDs are etched from the P-type semiconductor layer to the N-type semiconductor layer, and then metal-plated to make N-type electrodes, such as figure 1 For the production of formal LEDs, the production of N-type electrodes requires first etching the epitaxial layer structure from the P-type semiconductor layer to the N-type semiconductor layer, and removing the edge of the above stacked structure until the edge of the N-type semiconductor layer is exposed. On the one hand, the etching process is relatively complicated and time-consuming; on the other hand, the epitaxial layer is damaged by etching, which causes a large loss of LED light emission.

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