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Deep ultraviolet light emitting diode and preparation method thereof

A light-emitting diode, deep ultraviolet technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient carrier injection, enhanced hole injection, complex process, etc., to improve external quantum efficiency and increase hole concentration , Improve the effect of optical power

Pending Publication Date: 2022-05-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem to be solved by this technology is to provide a deep ultraviolet light-emitting diode and its preparation method to solve the problem of insufficient carrier injection of AlGaN-based DUV LEDs, thereby improving the external quantum efficiency and luminous power of AlGaN-based DUV LEDs; in addition, It can solve the problem of process complexity and high cost caused by introducing a new structure in the traditional AlGaN-based DUV LED to suppress electron leakage and enhance hole injection

Method used

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  • Deep ultraviolet light emitting diode and preparation method thereof
  • Deep ultraviolet light emitting diode and preparation method thereof
  • Deep ultraviolet light emitting diode and preparation method thereof

Examples

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Embodiment 1

[0047] A deep ultraviolet light-emitting diode in this embodiment, along the epitaxial growth direction, the epitaxial layer structure is a substrate 101, a buffer layer 102, an n-type semiconductor electron injection layer 103, a multi-quantum well active layer 104, and an AlGaN insertion layer 105 , p-type electron blocking layer 106 , p-type semiconductor hole injection layer 107 , p-type contact layer 108 , p-type electrode 109 , and n-type electrode 110 .

[0048] In the above, the material of the substrate 101 is sapphire, and the material of the buffer layer 102 is Al x1 Ga 1-x1 The value of N, x1 is 1, that is, the material of the buffer layer is AlN, the thickness is 100nm, and the material of the n-type semiconductor electron injection layer 103 is n-Al 0.6 Ga 0.4 N, with a doping concentration of 8e18 cm -3 , with a thickness of 4um, the material of the multi-quantum well active layer 104 is alternately grown barrier layers Al 0.57 Ga 0.43 N and well layer Al ...

Embodiment 2

[0065] Other steps in this embodiment are the same as in Embodiment 1, the difference is that the material of the AlGaN insertion layer 105 in this embodiment is Al y Ga 1-y N (y=0.57-0.65), y increases from 0.57 to 0.65 along the direction of epitaxial growth, and the thickness of the insertion layer is 20nm.

Embodiment 3

[0067] Other steps in this embodiment are the same as embodiment 1, and the difference is that the barrier layer is Al in this embodiment 0.6 Ga 0.4 N, the material of the p-type electron blocking layer 106 is p-Al 0.7 Ga 0.3 N, the material of the AlGaN insertion layer is Al y Ga 1-y N (y=0.6-0.85), y increases from 0.6 to 0.85 along the direction of epitaxial growth, and the thickness of the insertion layer is 10 nm.

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Abstract

The invention relates to a deep ultraviolet light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor photodiodes, and provides an AlGaN layer which is inserted between a last quantum barrier (LQB) and an electron blocking layer (EBL) of an active region in the deep ultraviolet light-emitting diode and has high Al components, and the Al components are linearly increased in the epitaxial growth direction of an AlGaN-based DUV LED. In addition, the starting Al composition of the inserted AlGaN layer is the same as the Al composition of the LQB, and the terminating Al composition is higher than the Al composition of the EBL. The main problem to be solved by the technology is to provide a deep ultraviolet light-emitting diode and a preparation method thereof to solve the problem of insufficient carrier injection of an AlGaN-based DUV LED, so that the external quantum efficiency and the light-emitting power of the AlGaN-based DUV LED are improved. In addition, the problems of process complexity and high cost caused by the fact that a new structure is introduced into a traditional AlGaN-based DUVLED to restrain electron leakage and enhance hole injection can be solved.

Description

technical field [0001] The invention relates to a deep ultraviolet light-emitting diode and a preparation method thereof, belonging to the technical field of semiconductor photodiodes. Background technique [0002] AlGaN material is a wide bandgap semiconductor with direct bandgap, and its bandgap is adjustable in the range of 3.4eV-6.2eV, and the corresponding wavelength range is 365nm-200nm, so it has become the most commonly used material for deep ultraviolet light-emitting diodes. AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have become the most promising deep ultraviolet light sources to replace mercury lamps due to their advantages such as low power consumption, non-toxic and non-polluting to the environment, small device size, long service life, and high reliability. [0003] After more than ten years of development, although AlGaN-based DUV LEDs have made some progress in epitaxial growth, the external quantum efficiency of AlGaN-based DUV LEDs is st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/12H01L33/32H01L33/00
CPCH01L33/145H01L33/325H01L33/12H01L33/0075H01L33/0066
Inventor 刘超刘梦然
Owner SHANDONG UNIV
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