852 nm wavelength high-power Faraday laser and implementation method thereof

A high-power, laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of susceptibility to current changes, temperature changes and mechanical vibrations, excessive center frequency drift, wide line width, etc., to achieve Effects of avoiding heat deposition effect, frequency stabilization, and reducing equivalent noise bandwidth

Pending Publication Date: 2022-05-13
浙江法拉第激光科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the shortcomings of the 852nm high-power external cavity semiconductor laser with too wide line width, excessive center frequency drift, and frequency easily affected by current changes, temperature changes, and mechanical vibrations, the present invention proposes a 852nm high-power Faraday laser and its implementation method , can narrow the line width, improve the frequency stability of the 852nm high-power external cavity semiconductor laser, suppress the center frequency drift, and overcome the disadvantages that the frequency is easily affected by current changes, temperature changes and mechanical vibrations, thereby greatly improving the high-power external cavity Overall System Performance of Diode Lasers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 852 nm wavelength high-power Faraday laser and implementation method thereof
  • 852 nm wavelength high-power Faraday laser and implementation method thereof
  • 852 nm wavelength high-power Faraday laser and implementation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0043] The present invention relates to an 852nm wavelength power Faraday laser such as Figure 1 As shown, it includes a special 852nm high-power single-peak high-transmittance Faraday atomic filter, high-power laser diode, collimated lens, first convex lens, second convex lens, cavity mirror, piezoelectric ceramic. The alkali metal atomic chamber in the special 852nm high-power single-peak high-permeability Faraday atomic filter is a mixture of Cs atoms and argon.

[0044] Among them, the high-power laser diode has a reflection-increasing coating, which improves the light transmittance of the surface of the high-power laser diode, and the inner cavity mold is suppressed. The fluorescence emitted by high-power lasers has a certain divergence angle, so a collimated lens is required for collimation, and when the collimated lens is installed, the gain medium in the high-power laser diode is placed at the focal length of the collimated lens, and then the collimated lens is fixed; for...

Embodiment approach 2

[0050] The present invention relates to an 852nm wavelength power Faraday laser, comprising a special 852nm high power single-peak high-permeability Faraday atomic filter, high-power laser diode, collimation lens, first convex lens, second convex lens, cavity mirror, piezoelectric ceramic.

[0051] The alkali metal atomic chamber in the special 852nm high-power single-peak high-permeability Faraday atomic filter is mixed with Cs atoms, Rb atoms and K atoms, and is mixed with argon and xenon to obtain.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Outer diameteraaaaaaaaaa
The inside diameter ofaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a 852 nm wavelength high-power Faraday laser and an implementation method thereof. The laser comprises a 852 nm high-power single-peak high-transmittance Faraday atom light filter, a laser diode, a collimating lens, a beam expanding device, an endoscope and piezoelectric ceramics. Polarized light output by the laser diode sequentially passes through the collimating lens and the beam expanding device and then enters the Faraday atom light filter. The Faraday atom light filter is used for carrying out mode selection on the incident laser and outputting the laser to the endoscope; the light beam returned by the endoscope sequentially passes through the Faraday atom light filter, the beam expanding device and the collimating lens and then returns to the laser diode to form light feedback; and the piezoelectric ceramic is fixed on the endoscope and is used for controlling the cavity length of the outer cavity. Line width can be narrowed, frequency stability is improved, center frequency drift is suppressed, the defect that frequency is easily affected by current change, temperature change, mechanical vibration and the like is overcome, and the overall performance of a system is greatly improved.

Description

Technical field [0001] The present invention belongs to the field of semiconductor laser technology, in particular to an 852nm wavelength power Faraday laser and a method of implementation thereof. Background [0002] Semiconductor lasers due to their long service life, small size, light weight, good tunableness, narrow line width and other advantages, has been in many industries such as military, medical, industrial and other applications, has become one of the most widely used lasers. When semiconductor lasers are applied, they often add an external cavity in addition to their resonators, which is called an external cavity semiconductor laser. In recent years, outer cavity semiconductor lasers have received more and more attention due to their superior performance, and have been widely used in cold atom physics, quantum optics, atomic clock technology, laser frequency stabilization, laser ranging, laser guidance, laser communication and other fields. [0003] In special applic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/14H01S5/10H01S5/065H01S5/028
CPCH01S5/14H01S5/0651H01S5/1039H01S5/028
Inventor 陈景标史航博王志洋常鹏媛史田田张佳
Owner 浙江法拉第激光科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products