Organic field effect transistor memory based on polyvinyl alcohol and preparation method thereof

A technology of polyvinyl alcohol and polyvinyl alcohol solution, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve problems such as affecting the device storage rate and device stability, hindering the charge transfer of organic field effect transistors, etc. Achieve the effect of easy promotion and integration of commercial applications, low price, and improved stability

Pending Publication Date: 2022-05-17
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of PVA by hydroxyl groups, defects will be formed at the interface to hinder the transport of charges in organic field effect transistors, thereby affecting the storage rate and stability of the device.

Method used

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  • Organic field effect transistor memory based on polyvinyl alcohol and preparation method thereof
  • Organic field effect transistor memory based on polyvinyl alcohol and preparation method thereof
  • Organic field effect transistor memory based on polyvinyl alcohol and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] An organic field effect transistor memory based on polyvinyl alcohol, the structure diagram is as follows figure 1 As shown, the structure of the memory includes a source-drain electrode 1, an organic semiconductor layer 2, a charge storage layer 3, a gate insulating layer 4, and a gate electrode 5 as a substrate from top to bottom; wherein, the charge storage layer and A hydrophobic film layer 6 is also arranged between the gate insulating layers; the hydrophobic film layer 6 is prepared by spin-coating a hydrophobic film solution on the gate insulating layer 4, and the hydrophobic film solution is polytetrafluoroethylene dispersed in water. Formation; the charge storage layer 3 is prepared by spin-coating a polyvinyl alcohol solution on the hydrophobic film layer 6, and the polyvinyl alcohol solution is formed by dissolving polyvinyl alcohol in a dimethyl sulfoxide solvent.

[0044] The organic field effect transistor memory uses N-type heavily doped silicon as the ga...

Embodiment 2

[0062] A preparation method of an organic field effect transistor memory based on polyvinyl alcohol, the specific steps are as follows:

[0063] (1) Disperse the polytetrafluoroethylene suspension in water to a concentration of 10% after dilution, and treat it with ultrasound for 15 minutes before use.

[0064] (2) Dissolve polyvinyl alcohol Mw ~ 116000 material in dimethyl sulfoxide solvent at a concentration of 3 mg / mL, heat at 60°C to dissolve completely, and let stand for later use.

[0065] (3) Cut the silicon wafer of N-type heavily doped silicon and the 50nm silicon dioxide gate insulating layer grown on it into a size of 1.5cm×1.5cm, and pass through acetone for 15min, ethanol for 15min, and deionized water for 15min in sequence Wash and dry at 120°C.

[0066] (4) Place the clean substrate after drying treatment for 5-10 minutes with ultraviolet ozone.

[0067] (5) Filter the prepared polytetrafluoroethylene solution with a 0.22 μm filter, suck it with a syringe and ...

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Abstract

The invention discloses a polyvinyl alcohol-based organic field effect transistor memory and a preparation method thereof. The memory structurally comprises a source electrode, a drain electrode, an organic semiconductor layer, a charge storage layer, a gate insulating layer and a gate electrode serving as a substrate from top to bottom in sequence, wherein a hydrophobic film layer is also arranged between the charge storage layer and the gate insulating layer; the hydrophobic film layer is prepared by spin-coating a hydrophobic film solution on the gate insulating layer, and the hydrophobic film solution is formed by dispersing polytetrafluoroethylene in water; and the charge storage layer is prepared by spin-coating a polyvinyl alcohol solution on the hydrophobic film layer. According to the method, the polytetrafluoroethylene film is introduced between the silicon wafer and the polyvinyl alcohol film in a spin-coating mode, the hydrogen bond acting force between PVA and the silicon wafer is isolated, formation of surface dipoles is hindered, and the spin-coated polytetrafluoroethylene serves as a hydrophobic film, so that the quality of the upper PVA film is greatly improved, and the morphology of the PVA film is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a polyvinyl alcohol-based organic field effect transistor memory and a preparation method thereof. Background technique [0002] The increasing data traffic and the rapid iteration of data storage technology have put forward an urgent demand for the performance improvement of storage devices. At present, the high-speed integration of semiconductor memory is close to the physical limit, and further reducing the size of the device to increase the storage capacity will be difficult to achieve for a long time in the future. Facing the contradiction between the increasing demand for storage and the unsustainable miniaturization of semiconductor devices, it is undoubtedly an excellent solution to use organic materials with excellent performance and low price to improve the performance of devices based on the original size. As a basic and important electronic c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10H01L51/05H01L51/40
CPCH10K71/12H10K10/80H10K10/466
Inventor 仪明东孙珂李雯钱扬周钱浩文
Owner NANJING UNIV OF POSTS & TELECOMM
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