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Organic photoelectric detector based on organic-metal ion chelating electron transport layer

An electron transport layer and photodetector technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problem of reducing the photocurrent density and electron mobility, limiting the application of organic photodetectors, and uneven surface of the electron transport layer, etc. problems, to achieve the effect of reducing interface defects, good air stability, and high mechanical flexibility

Pending Publication Date: 2022-05-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the surface of the electron transport layer in the prior art has many defects, and the surface of the electron transport layer is uneven, resulting in a large interface contact resistance between the electron transport layer and the photoactive layer, which increases the recombination probability of carriers , which reduces the photocurrent density and electron mobility
The study found that there are problems such as chemical reaction between the electron transport layer (such as PEIE) and some active layer materials, which greatly affects the detection performance of the device
In addition, the rigid electron transport layer will greatly limit the application of organic photodetectors in the field of flexible electronics.

Method used

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  • Organic photoelectric detector based on organic-metal ion chelating electron transport layer

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Embodiment 1

[0036] This embodiment proposes an organic photodetector based on an organic-metal ion chelating electron transport layer, with a structure such as figure 1 As shown, it includes a substrate 1 , a conductive cathode 2 , an electron transport layer 3 , a photoactive layer 4 , a hole transport layer 5 and a metal anode 6 sequentially arranged from bottom to top.

[0037] This embodiment also proposes a method for preparing the above-mentioned organic photodetector, comprising the following steps:

[0038] Step 1: Using ITO as the substrate composed of the substrate 1 and the conductive cathode 2, the substrate is sequentially cleaned, dried with nitrogen and cleaned with ultraviolet light;

[0039] Step 2: mix 0.3wt% PEIE solution with 15mg / ml (Sn(CH 3 COO) 2 4H 2 The O solution was mixed according to a volume ratio of 10:1 to obtain a PEIE-Sn mixed solution, which was then spin-coated on the surface of the conductive cathode 2 at a speed of 5000rpm for 40s, and after therma...

Embodiment 2

[0043] This embodiment proposes a method for preparing an organic photodetector based on an organic-metal ion chelated electron transport layer. Compared with Example 1, the only difference is that the 0.3wt% PEIE solution in step 2 is mixed with 15mg / ml (Sn(CH 3 COO) 2 4H 2 The mixing volume ratio of the O solution was adjusted to 5:1; other steps remained unchanged.

Embodiment 3

[0045] This embodiment proposes a method for preparing an organic photodetector based on an organic-metal ion chelated electron transport layer. Compared with Example 1, the only difference is that the 0.3wt% PEIE solution in step 2 is mixed with 15mg / ml (Sn(CH 3 COO) 2 4H 2 The mixing volume ratio of the O solution was adjusted to 1:1; other steps remained unchanged.

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Abstract

The invention provides an organic photoelectric detector based on an organic-metal ion chelating electron transport layer, which belongs to the technical field of organic semiconductor film photoelectric detectors and comprises a substrate, a conductive cathode, an electron transport layer, a photoactive layer, a hole transport layer and a metal anode which are sequentially arranged from bottom to top. Wherein the electron transport layer contains N-Sn bonds, and is obtained by mixing 0.3 wt% of a PEIE solution and 15mg / ml of a (Sn (CH3COO) 2.4 H2O solution according to the volume ratio of 10: (1-10), spin-coating and then carrying out thermal annealing at 100-200 DEG C. The electron transport layer PEIE-Sn has good air stability and is insensitive to ultraviolet, introduced Sn < 2 + > is chelated with an N element in PEIE, interface defects of a conductive cathode are reduced, energy level arrangement of a device is optimized, electron transport is promoted, chemical reaction between the PEIE and a photoactive layer material is inhibited, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor thin film photodetectors, in particular to an organic photodetector based on an organic-metal ion chelated electron transport layer. Background technique [0002] Organic photodetectors are a type of device that can realize photoelectric conversion made of organic semiconductor materials with photoelectric effect. Traditional photodetectors are made of inorganic semiconductor materials. The manufacturing process is complicated, the cost is high, the working voltage is high, and a refrigeration system is usually required, so it is not suitable for flexible and large-area devices. Because organic materials have high light absorption coefficient, light weight, low price, excellent processing performance and can work at room temperature, it is easier to prepare small-volume, low-power, low-cost detection devices, which can make up for the widespread use of inorganic photodetectors. Ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K85/30H10K30/20Y02E10/549
Inventor 太惠玲肖建花刘青霞王洋袁柳蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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