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Perovskite type alkaline earth vanadate film ferroelectric heterostructure and preparation method thereof

A technology of the aluminate, perovskite type, used in chemical instruments and methods, fabrication/processing of electromagnetic devices, magnetic field controlled resistors, etc.

Pending Publication Date: 2022-05-27
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems in the prior art mainly through dimensionality reduction and strain engineering to regulate its electron transport and metal-insulator transformation, and the proposed perovskite-type alkaline earth bauxite thin film ferroelectric heterostructure and its Preparation

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  • Perovskite type alkaline earth vanadate film ferroelectric heterostructure and preparation method thereof
  • Perovskite type alkaline earth vanadate film ferroelectric heterostructure and preparation method thereof
  • Perovskite type alkaline earth vanadate film ferroelectric heterostructure and preparation method thereof

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Embodiment 1

[0030] refer to figure 1 , Perovskite alkaline earth bauxite thin film ferroelectric heterostructure, the heterostructure includes a ferroelectric single crystal substrate and a perovskite alkaline earth bauxite thin film epitaxially grown on the substrate.

[0031] In the present invention, the preparation method of the perovskite alkaline earth aluminate thin film ferroelectric heterostructure includes the following steps:

[0032] Step 1: Select the perovskite alkaline earth aluminate ceramic block as the target;

[0033] Step 2: Then, a layer of epitaxial perovskite alkaline earth aluminate thin film is deposited on the ferroelectric single crystal substrate by using the pulsed laser deposition technology.

[0034] In the present invention, the application method of the ferroelectric heterostructure of the perovskite alkaline earth bauxite thin film is that by applying a longitudinal DC bias electric field to the ferroelectric single crystal substrate, an inverse piezoele...

Embodiment 2

[0037] Perovskite alkaline earth aluminate thin film ferroelectric heterostructure, the heterostructure includes a ferroelectric single crystal substrate and a perovskite alkaline earth aluminate thin film epitaxially grown on the substrate.

[0038] In the present invention, the ferroelectric single crystal substrate includes any one of PMN-PT, PIN-PMN-PT, and PZN-PT, and the perovskite alkaline earth aluminate includes CaVO 3 , SrVO 3 , BaVO 3 In any of them, the perovskite alkaline earth aluminate thin film exhibits correlated metal properties, and the perovskite alkaline earth aluminate thin film has a thickness of 20-300 nm.

[0039] In the present invention, the heterostructure also includes a metal electrode plated on the surface of the perovskite alkaline earth aluminate thin film and the backside of the ferroelectric single crystal substrate, and the metal electrode comprises any one of gold, silver, platinum and titanium.

[0040]In the present invention, the prepa...

Embodiment 3

[0046] Perovskite alkaline earth aluminate thin film ferroelectric heterostructure, the heterostructure includes a ferroelectric single crystal substrate and a perovskite alkaline earth aluminate thin film epitaxially grown on the substrate.

[0047] In the present invention, the ferroelectric single crystal substrate includes any one of PMN-PT, PIN-PMN-PT, and PZN-PT, and the perovskite alkaline earth aluminate includes CaVO 3 , SrVO 3 , BaVO 3 In any of them, the perovskite alkaline earth aluminate thin film exhibits correlated metal properties, and the perovskite alkaline earth aluminate thin film has a thickness of 20-300 nm.

[0048] In the present invention, the heterostructure also includes a metal electrode plated on the surface of the perovskite alkaline earth aluminate thin film and the backside of the ferroelectric single crystal substrate, and the metal electrode comprises any one of gold, silver, platinum and titanium.

[0049] In the present invention, the prep...

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Abstract

The invention discloses a perovskite type alkaline earth vanadate film ferroelectric heterostructure and a preparation method thereof. The heterostructure comprises a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate film epitaxially growing on the substrate. The preparation method comprises the following steps: step 1, selecting a perovskite type alkaline earth vanadate ceramic block as a target material; and 2, depositing a layer of epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology. According to the invention, the alkaline earth vanadate film is epitaxially grown on the ferroelectric single crystal substrate, the ferroelectric single crystal substrate generates an inverse piezoelectric effect and introduces in-plane compressive strain by controlling the intensity of a longitudinally applied direct-current electric field, so that the resistance of the alkaline earth vanadate film is regulated and controlled, an electro-resistance effect is presented, and the performance of the device is improved. The method has important guiding significance for application of related metal materials in new-generation electric field adjustable low-power-consumption nonvolatile electronic devices.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a perovskite alkaline earth aluminate thin film ferroelectric heterostructure and a preparation method thereof. Background technique [0002] Strongly correlated electron oxides present a large number of interesting physical phenomena such as high-temperature superconductivity, multiferroics, metal-insulator transition, topology Anomalous Hall effect, piezoelectric spintronics, etc. Among these oxides, the perovskite alkaline earth vanadate AVO 3 (A=Ca, Sr, Ba) can be used as electrode materials and transparent conductors due to their exotic physical properties such as strong electronic correlation, Mott transition, high electrical conductivity, and high optical transparency, which have broad application prospects, stimulating researchers' research interests. [0003] At present, their electron transport and metal-insulator transition are mainly regulated by dime...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12C30B25/18H10N50/10H10N50/01
CPCC30B25/18C01P2002/34H10N50/10H10N50/01
Inventor 郑明关朋飞
Owner CHINA UNIV OF MINING & TECH
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