High-toughness alumina-based composite ceramic substrate and preparation method thereof

Abstract

The invention discloses a high-toughness alumina-based composite ceramic substrate and a preparation method thereof, and relates to the technical field of composite ceramic substrates. The ceramic substrate material takes aluminum oxide as a matrix and LaAl11O18 and ZrO2 as reinforcement bodies, and is specifically characterized in that La2O3 and Al2O3 are completely reacted to form LaAl11O18 in the high-temperature sintering process in the step 1, only a small amount of Al2O3 and a large amount of LaAl11O18 exist at the moment, and no La2O3 exists at the moment. And in the step 3, the powder is mixed with Al2O3 and ZrO2 for sintering, so that the direct contact of La2O3 and ZrO2 is effectively avoided. According to the preparation method provided by the invention, on one hand, aluminum oxide and La2O3 can react to generate rod-shaped LaAl11O18, and microstructure toughening is realized; on the other hand, the over-stabilization effect of La2O3 on t-ZrO2 can be avoided, the phase change from t-ZrO2 to c-ZrO2 is prevented, and the reinforcing and toughening effects of t-ZrO2 are ensured; the synergistic effect of the two is beneficial to synchronously improving the strength and toughness of the alumina ceramic.

Description

technical field [0001] The invention relates to the technical field of composite ceramic substrates, in particular to a high-strength and tough alumina-based composite ceramic substrate and a preparation method thereof. Background technique [0002] Al 2 O 3 Ceramics have the advantages of high chemical stability, high corrosion resistance, low thermal expansion coefficient, low dielectric constant, low dielectric loss, and low manufacturing cost and abundant sources. They are widely used in the field of electronic packaging, accounting for the total number of ceramic plates. more than 80% of the amount. Ceramic substrates mainly play the role of semiconductor chip support, heat dissipation, protection, insulation and interconnection with external circuits in electronic packaging. In the post-Moore era, with the rise and application of power devices, especially third-generation semiconductors, semiconductor devices have gradually developed in the direction of high power, ...

AI Technical Summary

Problems solved by technology

[0004] However in Al 2 o 3 Simultaneous introduction of La into ceramics 2 o 3 and ZrO 2 However, it is difficult to effectively increase Al 2 o 3 The flexural strength and fracture toughness of ceramics; the main reason is that when La 2 o 3 When the dosage is large, the excessive dosage of rare earth oxide La 2 o 3 will promote ZrO 2 phase transition, resulting in ZrO 2 Transformation from tetragonal to cubic phase resulting in loss of ZrO 2 The phase change toughening effect; and La 2 o 3 When the dosage is small, due to the rod-shaped LaAl 11 o 18 The amount of formation is low, and it is difficult to achieve reinforcement and toughening of the rod-like structure

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