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Etching process method for regulating and controlling angle of etching slope of side wall of etched material

A technology of sidewall etching and process method, which is applied in the direction of photo-plate-making process coating equipment, photo-plate-making process exposure device, micro-lithography exposure equipment, etc.

Pending Publication Date: 2022-07-08
广东中科半导体微纳制造技术研究院 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention provides an etching process method for controlling the etching slope angle of the side wall of the etched material, so as to solve one or several technical problems existing in the prior art, and at least provide a beneficial choice or create conditions

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  • Etching process method for regulating and controlling angle of etching slope of side wall of etched material
  • Etching process method for regulating and controlling angle of etching slope of side wall of etched material
  • Etching process method for regulating and controlling angle of etching slope of side wall of etched material

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Embodiment 1

[0044] Embodiment 1, this embodiment 1 mainly describes the different exposure incident angles under the fixed photoresist thickness and etching selection, and the specific process is as follows:

[0045] (1) Spin-coat photoresist after cleaning the surfaces of two wafers (wafer1 and wafer2 respectively);

[0046] (2) Using the lift-off process line to first make the alignment mark mark of the subsequent lithography process on the surface of the two wafers (wafer1 and wafer2 respectively); specifically: expose the two wafers (wafer1 and wafer2 respectively), After developing, a Ti / Au film is deposited, and the photoresist is peeled off to obtain the alignment mark of the subsequent photolithography process; after cleaning, the photoresist is spin-coated for a second time.

[0047] (3) Align the samples obtained in step (2) with the first reticle to align the alignment mark of the wafer respectively, and then conduct oblique exposure, wherein, the oblique exposure incident angl...

Embodiment 2

[0051] Embodiment 2, this embodiment 2 is mainly to illustrate that in the fixed exposure beam incident angle and etching selection ratio, different photoresist thickness, the specific process is as follows:

[0052] (1) Spin-coat photoresist after cleaning the surfaces of two wafers (wafer1 and wafer2 respectively);

[0053] (2) Using the lift-off process line to first make the alignment mark mark of the subsequent lithography process on the surface of the two wafers (wafer1 and wafer2 respectively); specifically: expose the two wafers (wafer1 and wafer2 respectively), After developing, a Ti / Au film is deposited, and the photoresist is stripped to obtain the alignment mark of the subsequent lithography process; For H1, H2.

[0054] (3) Align the samples obtained in step (2) with the first reticle to align the wafer alignment mark, and then conduct oblique exposure. The oblique exposure incident angles of wafer1 and wafer2 are the same as θ (the angle between the incident lig...

Embodiment 3

[0058] Embodiment 3, this embodiment 3 is mainly to illustrate that in the fixed exposure beam incident angle and photoresist thickness, different etching selection ratios, the specific process is as follows:

[0059] (1) Spin-coat photoresist after cleaning the surfaces of two wafers (wafer1 and wafer2 respectively);

[0060] (2) Using the lift-off process line, firstly, the alignment marks of the subsequent photolithography process are formed on the surfaces of the two wafers (wafer1, wafer2). After cleaning, the photoresist is spin-coated at the same glue coating speed, and finally the thickness of the photoresist for wafer1 and wafer2 is H.

[0061] (3) The samples obtained in step (2) are respectively subjected to oblique exposure after using the first mask to align the alignment mark of the wafer, and the oblique exposure incident angles of wafer1 and wafer2 are the same as θ (the angle between the incident light and the wafer plane), Immediately after using the second ...

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Abstract

The invention discloses an etching process method for regulating and controlling the angle of an etching slope on the side wall of an etched material. The etching process method comprises the following steps: step 1, cleaning a plain film to be etched and then spin-coating photoresist; 2, manufacturing an alignment mark by adopting a lift-off process, exposing and developing the sample obtained in the step 1, depositing a Ti / Au thin film, and stripping the photoresist to obtain a subsequent photoetching process alignment mark; step 3, cleaning the sample obtained in the step 2, spin-coating the photoresist again, aligning the mark by using a first mask plate, performing inclined exposure, developing to form a photoresist side wall inclined surface, continuously aligning the mark by using other mask plates, performing exposure for multiple times, and developing to form a multi-direction photoresist side wall inclined surface; step 4, performing dry etching on the sample obtained in the step 3, and etching to a depth set value; and step 5, putting the sample obtained in the step 4 into an acetone solution, and removing the residual photoresist to obtain the inclined plane angle of the side wall of the etched material. The invention is mainly used in the technical field of semiconductors.

Description

technical field [0001] The invention relates to the technical field of semiconductor micro-nano processing and manufacturing, in particular to an etching process method for regulating the etching slope angle of a sidewall of a material to be etched. Background technique [0002] In the fabrication process of most micro-nano devices, the sidewall etching angle is a very important process parameter. The requirements of most device processes for the sidewall etch profile are that the sidewall is steep and the sidewall undercut is minimized. On the contrary, some micro-nano devices have special requirements for the sidewall etching angle, such as MEMS direction using anisotropic wet etching "V" groove and silicon polycrystalline direction reflective slope, flexible tactile sensor field using anisotropy Inverted pyramid slope structure prepared by wet etching, multi-table metal climbing process, LIGA electroplating process, sidewall inclined draft angle designed for easy separat...

Claims

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Application Information

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IPC IPC(8): H01L21/027H01L21/3065G03F7/20G03F7/16
CPCH01L21/0274H01L21/30655G03F7/2024G03F7/70425G03F7/70216G03F7/162
Inventor 陈祖军李俊鹏闫良吕伟明赵德胜张宝顺
Owner 广东中科半导体微纳制造技术研究院