Terahertz-frequency-band transparent piezoelectric film, ultrasonic transducer and preparation method of terahertz-frequency-band transparent piezoelectric film

A technology of ultrasonic transducer and piezoelectric film, which is applied in the field of terahertz photoacoustic imaging, can solve problems such as laser transmission obstruction, and achieve the effects of improving clarity, transparency, and strength

Active Publication Date: 2022-07-12
ZHEJIANG LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It not only breaks through the limitation of the optical diffraction limit of traditional terahertz imaging on its imaging resolution (λ / (2×NA)), realizes high-resolution terahertz imaging, but also solves the problem in the process of terahertz photoacoustic microscopy imaging. The problem of being blocked during the transmission of laser light to the object to be measured is to ensure that the laser in the terahertz frequency band can directly pass through the transparent ultrasonic transducer to reach the object to be measured, thereby ensuring that the object to be measured can excite strong sound waves after being irradiated by the laser signal, ensuring the clarity of the final imaging

Method used

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  • Terahertz-frequency-band transparent piezoelectric film, ultrasonic transducer and preparation method of terahertz-frequency-band transparent piezoelectric film
  • Terahertz-frequency-band transparent piezoelectric film, ultrasonic transducer and preparation method of terahertz-frequency-band transparent piezoelectric film
  • Terahertz-frequency-band transparent piezoelectric film, ultrasonic transducer and preparation method of terahertz-frequency-band transparent piezoelectric film

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Experimental program
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Effect test

Embodiment 1

[0047] The preparation method of the transparent piezoelectric film in the terahertz frequency band provided in this embodiment includes:

[0048] (1) The transparent polymethylpentene in the terahertz band is heated to a molten state;

[0049] (2) Add ≤4 layers of graphene transparent in the terahertz band to the molten polymethylpentene obtained in the above step (1) as a conductive doping phase, and add PMN-PT with a particle size of ≤5 μm, that is, graphite Both alkene and PMN-PT are dispersed in the polymethylpentene base in the molten state in a 0-dimensional manner, and the three are stirred while the polymethylpentene is in a molten state to make the dispersion uniform to obtain PMN-PT / graphite. ene / polymethylpentene composite solution;

[0050] Among them, the melting point of the inorganic piezoelectric material PMN-PT and ≤4-layer graphene transparent in the terahertz band as a doping phase should be higher than the melting point of polymethylpentene to ensure that...

Embodiment 2

[0058] The preparation method of the transparent piezoelectric film in the terahertz frequency band provided in this embodiment includes:

[0059] (1) The transparent polymethylpentene in the terahertz band is heated to a molten state;

[0060] (2) Add ≤4 layers of graphene transparent in the terahertz band to the molten polymer material obtained in the above step (1) as a conductive doping phase, and add PMN-PT with a particle size of ≤5 μm, that is, graphene, PMN-PT is dispersed in the polymethylpentene substrate in a molten state in a 0-dimensional manner, and the three are stirred while the polymethylpentene is in a molten state to make the dispersion uniform to obtain PMN-PT / graphene / Polymethylpentene composite solution;

[0061] (3) The solution obtained in the above step (2) is hot-pressed and cured into a PMN-PT / graphene / polymethylpentene composite piezoelectric film, and the final proportion of each component is PMN-PT 35wt%, polymethyl pentene Pentene 60wt%, graph...

Embodiment 3

[0068] The preparation method of the transparent piezoelectric film in the terahertz frequency band provided in this embodiment includes:

[0069] (1) The transparent polymethylpentene in the terahertz band is heated to a molten state;

[0070] (2) Add ≤4 layers of graphene transparent in the terahertz band to the molten polymer material obtained in the above step (1) as a conductive doping phase, and add PMN-PT with a particle size of ≤5 μm, that is, graphene, PMN-PT is dispersed in the polymethylpentene substrate in a molten state in a 0-dimensional manner, and the three are stirred while the polymethylpentene is in a molten state to make the dispersion uniform to obtain PMN-PT / graphene / Polymethylpentene composite solution;

[0071] (3) The solution obtained in the above step (2) is hot-pressed and cured into a PMN-PT / graphene / polymethylpentene composite piezoelectric film, and the final proportion of each component is PMN-PT 50wt%, polymethyl pentene Pentene 35wt%, graph...

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Abstract

The invention discloses a terahertz-frequency-band transparent piezoelectric film, an ultrasonic transducer and a preparation method of the terahertz-frequency-band transparent piezoelectric film. The transparent piezoelectric film is formed by compounding an inorganic piezoelectric material, a conductive phase transparent in a terahertz frequency band and a polymer material. Then, the obtained transparent composite piezoelectric film of the terahertz frequency band is used as a core element to prepare a transparent ultrasonic transducer, and finally, the prepared ultrasonic transducer is applied to terahertz photoacoustic microscopic imaging, so that the light transmission efficiency in terahertz photoacoustic imaging is improved. The intensity of sound wave signals excited by the to-be-detected object after laser irradiation is improved, and then the definition of terahertz photoacoustic imaging is improved.

Description

technical field [0001] The invention relates to the technical field of terahertz photoacoustic imaging, in particular to a transparent piezoelectric film applied to terahertz photoacoustic microscopic imaging, a transparent ultrasonic transducer and a preparation method thereof. Background technique [0002] The frequency of terahertz wave is usually between 0.1THz-10THz, and its wavelength range is between 30μm-3000μm. Due to the fact that terahertz waves can penetrate most non-polar dielectrics and their low photon energy, they have been widely used in semiconductors, biomedicine, security inspection, and pharmaceuticals in recent years. Due to the strong absorption of terahertz radiation by water in biological tissues, terahertz imaging has great application potential for monitoring and recovery of burned skin tissue. However, due to the long wavelength of terahertz, the resolution of traditional terahertz imaging is limited by the optical diffraction limit (λ / (2×NA), wh...

Claims

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Application Information

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IPC IPC(8): C08L23/20C08K3/04C08K3/22C08J7/044C09D125/18C09D165/00C09D5/24G01N21/17G01N29/24
CPCC08J7/044G01N29/2437G01N29/2418G01N21/1702C08J2323/20C08J2425/18C08J2465/00C08K3/042C08K2201/001C08K3/22
Inventor 任丹阳施钧辉尹永刚陈睿黾李驰野
Owner ZHEJIANG LAB
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